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DS_K4S161622D中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書

DS_K4S161622D
廠商型號(hào)

DS_K4S161622D

功能描述

1M x 16 SDRAM

文件大小

680.82 Kbytes

頁(yè)面數(shù)量

43 頁(yè)

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡(jiǎn)稱

Samsung三星

中文名稱

三星半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-21 19:10:00

DS_K4S161622D規(guī)格書詳情

GENERAL DESCRIPTION

The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES

? 3.3V power supply

? LVTTL compatible with multiplexed address

? Dual banks operation

? MRS cycle with address key programs

-. CAS Latency ( 2 & 3)

-. Burst Length (1, 2, 4, 8 & full page)

-. Burst Type (Sequential & Interleave)

? All inputs are sampled at the positive going edge of the system clock

? Burst Read Single-bit Write operation

? DQM for masking

? Auto & self refresh

? 15.6us refresh duty cycle (2K/32ms)

? Extended temperature range : -25°C to +85°C

? Industrial temperature range : -40°C to +85°C

產(chǎn)品屬性

  • 型號(hào):

    DS_K4S161622D

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    1M x 16 SDRAM

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