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FJNS4212R

PNPEpitaxialSiliconTransistor

SwitchingApplication(BiasResistorBuiltIn) ?Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit ?BuiltinbiasResistor(R=47K?) ?ComplementtoFJNS3212R

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

GC4212

HIGHSPEEDPINDIODES

DESCRIPTION TheGC4200seriesarehighspeed(cathodebase)PINdiodesmadewithhighresistivityepitaxialsiliconmaterial.Thesediodesarepassivatedwithsilicondioxideforhighstabilityandreliabilityandhavebeenprovenbythousandsofdevicehoursinhighreliabilitysystems. APPLICA

MicrosemiMicrosemi Corporation

美高森美美高森美公司

GC4212

TMCONTROLDEVICES-HIGHSPEEDPINDIODES

DESCRIPTION TheGC4200seriesarehighspeed(cathodebase)PINdiodesmadewithhighresistivityepitaxialsiliconmaterial.Thesediodesarepassivatedwithsilicondioxideforhighstabilityandreliabilityandhavebeenprovenbythousandsofdevicehoursinhighreliabilitysystems. APPLICA

MicrosemiMicrosemi Corporation

美高森美美高森美公司

GMP4212

SurfaceMountPIN&LimiterDiodes

MicrosemiMicrosemi Corporation

美高森美美高森美公司

HO-NP-4212

CurrentTransducer

LEMLEM Electronics (China) Co., Ltd.

萊姆電子萊姆(LEM)集團(tuán)

HO-P-4212

CurrentTransducer

LEMLEM Electronics (China) Co., Ltd.

萊姆電子萊姆(LEM)集團(tuán)

IIRFB4212

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFB4212

KeyparametersoptimizedforClass-Daudioamplifierapplications

KERSEMI

Kersemi Electronic Co., Ltd.

IRFB4212

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFB4212PBF

KeyparametersoptimizedforClass-Daudioamplifierapplications

Description ThisDigitalAudioMOSFETisspecificallydesignedforClass-Daudioamplifierapplications.ThisMOSFETutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Furthermore,Gatecharge,body-diodereverserecoveryandinternalGateresistanceareopti

KERSEMI

Kersemi Electronic Co., Ltd.

IRFB4212PBF

KeyparametersoptimizedforClass-Daudioamplifierapplications

IRF

International Rectifier

IRFB4212PBF

DIGITALAUDIOMOSFET

Description ThisDigitalAudioMOSFETisspecificallydesignedforClass-Daudioamplifierapplications.ThisMOSFETutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Furthermore,Gatecharge,body-diodereverserecoveryandinternalGateresistanceareopti

IRF

International Rectifier

IRKH4212A

THYRISTOR/DIODEandTHYRISTOR/THYRISTOR

IRF

International Rectifier

IRKL4212A

THYRISTOR/DIODEandTHYRISTOR/THYRISTOR

IRF

International Rectifier

IRKN4212A

THYRISTOR/DIODEandTHYRISTOR/THYRISTOR

IRF

International Rectifier

IRKT4212A

THYRISTOR/DIODEandTHYRISTOR/THYRISTOR

IRF

International Rectifier

K4212

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK4212AisN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES ?Lowon-stateresistance RDS(on)1=8.0

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

KM4212

Dual,70A,LowCost,2.7V&5V,7.3MHzRail-to-RailAmp

GeneralDescription TheKM4212isanultra-lowpower,lowcost,voltagefeedbackamplifier.TheKM4212usesonly70μAofsupplycurrentandisdesignedtooperateon+2.7V,+5V,or±2.5Vsupplies.Theinputvoltagerangeextends300mVbelowthenegativerailand1.2Vbelowthepositiverail. Fea

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KUWTN-4212

Plug-inSignalConditionersK-UNIT

MSYSTEMM-System Co.,Ltd.

愛(ài)模愛(ài)模系統(tǒng)有限公司

KUWTN-4212/Q

Plug-inSignalConditionersK-UNIT

MSYSTEMM-System Co.,Ltd.

愛(ài)模愛(ài)模系統(tǒng)有限公司

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24+
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42
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IXYS
24+
MODULE
2050
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23+
MODULE
10000
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1715+
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251156
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2310+
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3668
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41224
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22+
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20000
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21+
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3500
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MITSUBISHI
21+
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3500
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MITSUBISHI/三菱
22+
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13847
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更多DSA4212供應(yīng)商 更新時(shí)間2025-1-19 16:30:00