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DTB114EC

PNP-500mA-50VDigitalTransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTB114ECHZG

PNP-500mA-50VDigitalTransistor(BiasResistorBuilt-inTransistor)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTB114EK

Digitaltransistors(built-inresistors)

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTB114EK

-500mA/-50VDigitaltransistors(withbuilt-inresistors)

Features 1)Built-inbiasresistorsenabletheconfigurationofaninverter circuitwithoutconnectingexternalinputresistors(seeequivalentcircuit). 2)Thebiasresistorsconsistofthin-filmresistorswithcomplete isolationtoallowpositivebiasingoftheinput.Theyalsohave

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTB114EK

PNP-500mA-50VDigitalTransistors(BiasResistorBuilt-inTransistors)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTB114EK

PNP-500mA-50VDigitalTransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTB114EKFRA

-500mA/-50VDigitaltransistor(built-inresistors)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTB114ES

Digitaltransistors(built-inresistors)

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTB114G

DIGITALTRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTB114GC

-500mA/-50VDigitaltransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTB114GCHZG

-500mA/-50VDigitaltransistor(withbuilt-inresistor)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTB114GK

Digitaltransistors(built-inresistor)

Features 1)Thebuilt-inbiasresistorsconsistofthin-filmresistorswithcompleteisolationtoallowpositivebiasingoftheinput,andparasiticeffectsarealmostcompletelyeliminated. 2)Onlytheon/offconditionsneedtobesetforoperation,makingdevicedesigheasy. 3)Highermountin

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTB114GK

−500mA/−50VDigitaltransistors(withbuilt-inresistors)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTB114GK

-500mA/-50VDigitaltransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTB114T

DIGITALTRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTB114TK

Digitaltransistor(built-inresistor)

DTB114TK Digitaltransistor(built0inresistor) DTDG23YP Digitaltransistor(builtinresistorsandzenerdiode),driver(60V,1A)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTB114TK

-500mA/-40VDigitaltransistor(withbuilt-inresistor)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC114

Digitaltransistors(built-inresistors)

?Features 1)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeequivalentcircuit). 2)Thebiasresistorsconsistofthinfilmresistorswithcompleteisolationtoallowpositivebiasingoftheinput.Theyalsohavethea

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

DTC114

NPNSmallSignalTransistorSmallSignalDiode

FEATURES -Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistor(seeequivalentcircuit). -Thebiasresistorsconsistofthin-filmresistorswithcompleteisolationtoallownegativebiasingoftheinput.Theyalsohavetheadvantage

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

DTC114

BiasResistorTransistor

BiasResistorTransistor NPNSiliconSurfaceMountTransistor withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamonoli

FS

First Silicon Co., Ltd

晶體管資料

  • 型號:

    DTB114E(A,F,L,S,V)

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-P+R

  • 性質(zhì):

    開關(guān)管 (S)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    50V

  • 最大電流允許值:

    0.5A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    RN2224,UN4123,2SA1522,2SA1526,

  • 最大耗散功率:

    0.6W

  • 放大倍數(shù):

  • 圖片代號:

    A-68

  • vtest:

    50

  • htest:

    999900

  • atest:

    0.5

  • wtest:

    0.6

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ROHM
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ROHM
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SST3
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更多DTB114E(A,F,L,S,V)供應(yīng)商 更新時(shí)間2025-1-18 15:00:00