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DXT751

LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR

Features ?EpitaxialPlanarDieConstruction ?ComplementaryNPNTypeAvailable(DXT651) ?IdeallySuitedforAutomatedAssemblyProcesses ?IdealforMediumPowerSwitchingorAmplificationApplications ?LeadFreeByDesign/RoHSCompliant(Note1) ?GreenDevice(Note2)

DIODES

Diodes Incorporated

DXT751Q

60VPNPLOWSATURATIONPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofautomotiveapplications. Features ?BVCEO>-60V ?IC=-3AHighContinuousCollectorCurrent ?ICMupto-6APeakPulseCurrent ?2WPowerDissipation ?ComplementaryPNPType:DXT651Q ?T

DIODES

Diodes Incorporated

DZT751

LOWVCEPNPSURFACEMOUNTTRANSISTOR

Features ?EpitaxialPlanarDieConstruction ?ComplementaryNPNTypeAvailable(DZT651) ?IdeallySuitedforAutomatedAssemblyProcesses ?IdealforMediumPowerSwitchingorAmplificationApplications ?LeadFreeByDesign/RoHSCompliant(Note1) ?“Green”Device(Note2)

DIODES

Diodes Incorporated

ESD751

ESD751andESD76124-V1-ChannelESDProtectionDiodes

1Features ?IEC61000-4-2level4ESDprotection: –±22-kVor±15-kVcontactdischarge –±22-kVor±15-kVair-gapdischarge ?Robustsurgeprotection: –IEC61000-4-5(8/20μs):2.8Aor1.8A ?24-Vworkingvoltage ?BidirectionalESDprotection ?Lowclampingvoltageprotectsdownstream

TITexas Instruments

德州儀器美國(guó)德州儀器公司

ESD751

ESD1LIN24-Q1,ESD751-Q1,andESD761-Q1Automotive24-V,1-ChannelESDProtectionDiodesforIn-VehicleNetworks

1Features ?IEC61000-4-2level4ESDprotection: –±30-kV,±22-kVor±15-kVcontactdischarge –±30-kV,±22-kVor±15-kVair-gapdischarge ?ISO10605(330pF,330Ω)ESDprotection: –±30-kV,±22-kVor±15-kVcontactdischarge –±30-kV,±22-kVor±15-kVair-gapdischarge ?24-Vworkingv

TITexas Instruments

德州儀器美國(guó)德州儀器公司

ESD751

ESD1LIN24-Q1,ESD751-Q1,andESD761-Q1Automotive24-V,1-ChannelESDProtectionDiodesforIn-VehicleNetworks

1Features ?IEC61000-4-2level4ESDprotection: –±30-kV,±22-kVor±15-kVcontactdischarge –±30-kV,±22-kVor±15-kVair-gapdischarge ?ISO10605(330pF,330Ω)ESDprotection: –±30-kV,±22-kVor±15-kVcontactdischarge –±30-kV,±22-kVor±15-kVair-gapdischarge ?24-Vworkingv

TITexas Instruments

德州儀器美國(guó)德州儀器公司

ESD751

ESD751andESD76124-V1-ChannelESDProtectionDiodes

1Features ?IEC61000-4-2level4ESDprotection: –±22-kVor±15-kVcontactdischarge –±22-kVor±15-kVair-gapdischarge ?Robustsurgeprotection: –IEC61000-4-5(8/20μs):2.8Aor1.8A ?24-Vworkingvoltage ?BidirectionalESDprotection ?Lowclampingvoltageprotectsdownstream

TITexas Instruments

德州儀器美國(guó)德州儀器公司

ESD751DYAR

ESD751andESD76124-V1-ChannelESDProtectionDiodes

1Features ?IEC61000-4-2level4ESDprotection: –±22-kVor±15-kVcontactdischarge –±22-kVor±15-kVair-gapdischarge ?Robustsurgeprotection: –IEC61000-4-5(8/20μs):2.8Aor1.8A ?24-Vworkingvoltage ?BidirectionalESDprotection ?Lowclampingvoltageprotectsdownstream

TITexas Instruments

德州儀器美國(guó)德州儀器公司

ESD751DYAR

ESD751andESD76124-V1-ChannelESDProtectionDiodes

1Features ?IEC61000-4-2level4ESDprotection: –±22-kVor±15-kVcontactdischarge –±22-kVor±15-kVair-gapdischarge ?Robustsurgeprotection: –IEC61000-4-5(8/20μs):2.8Aor1.8A ?24-Vworkingvoltage ?BidirectionalESDprotection ?Lowclampingvoltageprotectsdownstream

TITexas Instruments

德州儀器美國(guó)德州儀器公司

FDR751E

SCHOTTKYBARRIERDIODE

FS

First Silicon Co., Ltd

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更多DWSD751H供應(yīng)商 更新時(shí)間2025-1-21 11:00:00