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DZF-32-200-A-P-A

Flat cylinder

FESTOFesto Corporation.

費斯托

BYV32-200

Switch‐modePowerRectifier

FeaturesandBenefits ?LowForwardVoltage ?LowPowerLoss/HighEfficiency ?HighSurgeCapacity ?175°COperatingJunctionTemperature ?16ATotal(8APerDiodeLeg) ?TheseDevicesarePb?FreeandareRoHSCompliant* Applications ?PowerSupply?OutputRectification ?PowerManagem

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BYV32-200

UltrafastRectifierDiode

FEATURES ·Highthermalcyclingperformance ·Lowon-statelosses ·Lowthermalresistance ·Softrecoverycharacteristic APPLICATIONS ·Switchedmodepowersupplies ·PowerFactorCorrection(PFC)forInterleavedTopology

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BYV32-200

Rectifierdiodesultrafast

GENERALDESCRIPTION Glasspassivatedhighefficiencydualrectifierdiodesinaplasticenvelope,featuringlowforwardvoltagedrop,ultra-fastrecoverytimesandsoftrecoverycharacteristic.Theyareintendedforuseinswitchedmodepowersuppliesandhighfrequencycircuitsingeneralwhere

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BYV32-200

UltrafastRectifier

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BYV32-200

FASTEFFICIENTPLASTICRECTIFIER

FEATURES ?Dualrectifierconstruction,positivecentertap ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ?Glasspassivatedchipjunctions ?Lowpowerloss ?Lowforwardvoltage,highcurrentcapability ?Highsurgecapability ?Superfastrecoverytimefor

GE

GE Industrial Company

BYV32-200

DualCommon-CathodeUltrafastRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BYV32-200

SWITCHMODETMPowerRectifier

ULTRAFASTRECTIFIER16AMPERES,200VOLTStrr=35ns FeaturesandBenefits ?LowForwardVoltage ?LowPowerLoss/HighEfficiency ?HighSurgeCapacity ?175°COperatingJunctionTemperature ?16ATotal(8APerDiodeLeg) ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BYV32-200G

SWITCHMODETMPowerRectifier

ULTRAFASTRECTIFIER16AMPERES,200VOLTStrr=35ns FeaturesandBenefits ?LowForwardVoltage ?LowPowerLoss/HighEfficiency ?HighSurgeCapacity ?175°COperatingJunctionTemperature ?16ATotal(8APerDiodeLeg) ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BYV32-200G

Switch.modePowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BYV32-200M

DUALFASTRECOVERYRECTIFIERDIODE

SEME-LAB

Seme LAB

BYV32-200M

HERMETICALLYSEALEDDUALFASTRECOVERYSILICONRECTIFIERFORHI.RELAPPLICATIONS

HERMETICALLYSEALEDDUALFASTRECOVERYSILICONRECTIFIERFORHI–RELAPPLICATIONS ?STANDARD(COMMONCATHODE) ?COMMONANODE ?SERIESCONNECTION FEATURES ?HERMETICTO220METALORCERAMICSURFACEMOUNTPACKAGE ?SCREENINGOPTIONSAVAILABLE ?ALLLEADSIOLATEDFROMCASE ?VOLTAGERANGE50TO

SEME-LAB

Seme LAB

BYV32-200SMD

DUALFASTRECOVERYRECTIFIERDIODE

SEME-LAB

Seme LAB

BYV32-200-XM

HERMETICALLYSEALEDDUALFASTRECOVERYSILICONRECTIFIERFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

BYV32-200-XTM

HERMETICALLYSEALEDDUALFASTRECOVERYSILICONRECTIFIERFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

BYVB32-200

FASTEFFICIENTPLASTICRECTIFIER

FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ?Dualrectifierconstruction,positivecentertap ?Glasspassivatedchipjunctions ?Lowpowerloss ?Lowforwardvoltage,highcurrentcapability ?Highsurgecapability ?Superfastrecoverytimefor

GE

GE Industrial Company

BYVB32-200

UltrafastPowerDiode

FEATURES ·Highthermalcyclingperformance ·Lowon-statelosses ·Lowthermalresistance ·Softrecoverycharacteristic APPLICATIONS ·Switchedmodepowersupplies ·PowerFactorCorrection(PFC)forInterleavedTopology

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BYVF32-200

UltrafastRectifierDiode

FEATURES ·Highthermalcyclingperformance ·Lowon-statelosses ·Lowthermalresistance ·Softrecoverycharacteristic APPLICATIONS ·Switchedmodepowersupplies ·PowerFactorCorrection(PFC)forInterleavedTopology

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BYVF32-200

DualUltrafastPlasticRectifiers

EIC

EIC discrete Semiconductors

CRDSNU-B-32-200-PPS-A-MG

Roundcylinder

FESTOFesto Corporation.

費斯托

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100
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更多DZF-32-200-A-P-A供應(yīng)商 更新時間2025-1-18 18:26:00