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E15N50

Marking：E15N50；Package：TO-263；15A 500V N-channel Enhancement Mode Power MOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司

F15N50

15A500VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司

FDB15N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDB15N50

15A,500V,0.38Ohm,N-ChannelSMPSPowerMOSFET

Features ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ?ReducedrDS(ON) ?ReducedMillerCapacitanceandLowInputCapacitance ?ImprovedSwitchingSpeedwithLowEMI ?175°CRatedJunctionTemperature Applications

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDB15N50

N-ChannelSMPSPowerMOSFET

Features ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ●ReducedrDS(ON) ●ReducedMillerCapacitanceandLowInputCapacitance ●ImprovedSwitchingSpeedwithLowEMI

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

FDH15N50

15A,500V,0.38Ohm,N-ChannelSMPSPowerMOSFET

Features ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ?ReducedrDS(ON) ?ReducedMillerCapacitanceandLowInputCapacitance ?ImprovedSwitchingSpeedwithLowEMI ?175°CRatedJunctionTemperature Applications

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDH15N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP15N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP15N50

15A,500V,0.38Ohm,N-ChannelSMPSPowerMOSFET

Features ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ?ReducedrDS(ON) ?ReducedMillerCapacitanceandLowInputCapacitance ?ImprovedSwitchingSpeedwithLowEMI ?175°CRatedJunctionTemperature Applications

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HM15N50

500VN-ChannelMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

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INFINEON/英飛凌
23+
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28250
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23+
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900
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23+
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3562
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ST
23+
原廠原裝
1001
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ST
6000
面議
19
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ST
專業(yè)模塊
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8513
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ST
2018+
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6000
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2023+
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80000
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ST
24+
2173
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24+
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6430
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更多E15N50供應(yīng)商 更新時(shí)間2025-2-4 23:00:00

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