E28F002BC-T120中文資料英特爾數(shù)據(jù)手冊PDF規(guī)格書

INTRODUCTION

This datasheet comprises the specifications for the 28F002BC 2-Mbit flash memory. Section 1 provides an overview of the 2-Mbit flash memory, including applications, pinouts, and pin descriptions. Section 2 describes the memory organization in detail. Section 3 defines a description of the memory’s principles of operation. Finally, Section 4 details the memory’s operating specifications.

■ High Performance Read

- 80/120 ns Max Access Time 40 ns Max. Output Enable Time

■ Low Power Consumption

- 20 mA Typical Read Current

■ x8-Only Input/Output Architecture

- Space-Constrained 8-bit Applications

■ Optimized Array Blocking Architecture

- One 16-KB Protected Boot Block

- Two 8-KB Parameter Blocks

- One 96-KB Main Block

- One 128-KB Main Block

- Top Boot Location

■ Hardware Data Protection Feature

- Erase/Write Lockout during Power Transitions

- Absolute Hardware Protection for Boot Block

■ Software EEPROM Emulation with Parameter Blocks

■ Extended Cycling Capability

- 100,000 Block Erase Cycles

■ Automated Byte Write and Block Erase

■ Industry-Standard Command User Interface

- Status Registers

- Erase Suspend Capability

■ SRAM-Compatible Write Interface

■ Reset/Deep Power-Down Input

- 0.2 μA ICC Typical

- Provides Reset for Boot Operations

■ Industry-Standard Surface Mount Packaging

- 40-Lead TSOP

- 44-Lead PSOP

- 40-Lead PDIP

■ ETOX? IV Flash Technology

- 5V Read

■ 12V Write and Block Erase

- VPP = 12V ±5 Standard

- VPP = 12V ±10 Option

■ Independent Software Vendor Support