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IXFC36N50P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFC36N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=19A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH36N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=170mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH36N50P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFR36N50P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFT36N50P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFV36N50P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFV36N50PS

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXTH36N50P

PolarHVPowerMOSFET

IXYS

IXYS Corporation

IXTH36N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTN36N50

N-ChannelEnhancementMode

IXYS

IXYS Corporation

IXTQ36N50P

N-ChannelEnhancementMode

IXYS

IXYS Corporation

IXTQ36N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTQ36N50P

PolarHVPowerMOSFET

IXYS

IXYS Corporation

IXTT36N50P

PolarHVPowerMOSFET

IXYS

IXYS Corporation

IXTT36N50P

N-ChannelEnhancementMode

IXYS

IXYS Corporation

IXTV36N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTV36N50P

PolarHVPowerMOSFET

IXYS

IXYS Corporation

IXTV36N50PS

PolarHVPowerMOSFET

IXYS

IXYS Corporation

SIHS36N50D

DSeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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更多E36N50供應(yīng)商 更新時間2025-1-10 17:23:00