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EB201D中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

EB201D
廠商型號

EB201D

功能描述

High Cell Density MOSFETs Low On-Resistance Affords New Design Options

文件大小

121.9 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-11 17:34:00

EB201D規(guī)格書詳情

High Cell Density MOSFETs

Low On–Resistance Affords New Design Options

Just a few years ago an affordable 60 V, 10 m? power transistor was a dream. After all, 10 m? is the resistance of about 20 cm of #22 gauge wire. Today a sub–10 m? power MOSFET is not only available, it is housed in a standard TO–220. Such are the advances that have occurred lately in “high cell density” power MOSFET technology. Furthermore, Motorola’s high cell density technology, HDTMOS?, brings other advantages such as greatly improved body diode performance. The technological advances are sufficiently great that they are fundamentally changing low voltage power transistor technology.

產(chǎn)品屬性

  • 型號:

    EB201D

  • 制造商:

    ONSEMI

  • 制造商全稱:

    ON Semiconductor

  • 功能描述:

    High Cell Density MOSFETs Low On-Resistance Affords New Design Options

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