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EBE10UE8ACWA-8G-E中文資料美光科技數(shù)據(jù)手冊PDF規(guī)格書
EBE10UE8ACWA-8G-E規(guī)格書詳情
Features
? Double-data-rate architecture; two data transfers per clock cycle
? The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
? Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
? DQS is edge-aligned with data for READs; center aligned with data for WRITEs
? Differential clock inputs (CK and /CK)
? DLL aligns DQ and DQS transitions with CK transitions
? Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
? Data mask (DM) for write data
? Posted /CAS by programmable additive latency for better command and data bus efficiency
? Off-Chip-Driver Impedance Adjustment and On-Die Termination for better signal quality
? /DQS can be disabled for single-ended Data Strobe operation
Specifications
? Density: 1GB
? Organization
?- 128M words × 64 bits, 1 rank
? Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA
? Package: 240-pin socket type dual in line memory module (DIMM)
?- PCB height: 30.0mm
?- Lead pitch: 1.0mm
?- Lead-free (RoHS compliant)
? Power supply: VDD = 1.8V ± 0.1V
? Data rate: 800Mbps/667Mbps (max.)
? Eight internal banks for concurrent operation (components)
? Interface: SSTL_18
? Burst lengths (BL): 4, 8
? /CAS Latency (CL): 3, 4, 5, 6
? Precharge: auto precharge option for each burst access
? Refresh: auto-refresh, self-refresh
? Refresh cycles: 8192 cycles/64ms
?- Average refresh period
7.8μs at 0°C ≤ TC ≤ +85°C
3.9μs at +85°C < TC ≤ +95°C
? Operating case temperature range
?- TC = 0°C to +95°C
產(chǎn)品屬性
- 型號：
EBE10UE8ACWA-8G-E
- 制造商：
ELPIDA
- 制造商全稱：
Elpida Memory
- 功能描述：
1GB Unbuffered DDR2 SDRAM DIMM
