| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
DIFFERENTIALCONNECTOR | FujitsuFujitsu Component Limited. 富士通富士通株式會(huì)社 | Fujitsu | ||
.100IDCSOCKET.100X.100[2.54X2.54]CENTERLINE | ADAM-TECHAdam Technologies, Inc. 亞當(dāng)科技亞當(dāng)科技股份有限公司 | ADAM-TECH | ||
P-Channel2.5VSpecifiedPowerTrenchMOSFET GeneralDescription ThisP-Channel2.5VspecifiedMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features ?–9.7A,–20V.RDS(ON)=10.0m? | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
23A,250V,0.130Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardness | Intersil Intersil Corporation | Intersil | ||
23A,250V,0.130Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardness | Intersil Intersil Corporation | Intersil | ||
23A,250V,0.130Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardness | Intersil Intersil Corporation | Intersil | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
34A,250V,0.120Ohm,RadHard,N-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
34A,250V,0.120Ohm,RadHard,N-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
34A,250V,0.120Ohm,RadHard,N-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-P+Darl
- 性質(zhì)：
功率放大 （L）
- 封裝形式：
直插封裝
- 極限工作電壓：
100V
- 最大電流允許值：
10A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號(hào)：
NTE264,
- 最大耗散功率：
65W
- 放大倍數(shù)：
- 圖片代號(hào)：
B-10
- vtest：
100
- htest：
999900
- atest：
10
- wtest：
65
詳細(xì)參數(shù)
- 型號(hào)：
ECG264
- 制造商：
PHI
- 功能描述：
PHILIPS S8MX8B
- 制造商：
ECG
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SYL |
23+ |
452 |
詢價(jià) | ||||
ECG |
TO-3 |
15 |
原裝現(xiàn)貨 實(shí)單可談 |
詢價(jià) | |||
ECG |
23+ |
原包裝 |
8890 |
價(jià)格優(yōu)勢(shì)、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來電查詢 |
詢價(jià) | ||
24+ |
N/A |
47000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
YUNXING |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價(jià) | ||
YUNXING |
30 |
詢價(jià) | |||||
YUNXING |
24+ |
con |
2500 |
優(yōu)勢(shì)庫存,原裝正品 |
詢價(jià) |
