| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
P-Channel2.5VSpecifiedPowerTrenchBGAMOSFET GeneralDescription CombiningFairchild’sadvanced2.5VspecifiedPowerTrenchprocesswithstateoftheartBGApackaging,theFDZ299PminimizesbothPCBspaceandRDS(ON).ThisBGAMOSFETembodiesabreakthroughinpackagingtechnologywhichenablesthedevicetocombineexcellentthermaltransf | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO | Intersil Intersil Corporation | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State | Intersil Intersil Corporation | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State | Intersil Intersil Corporation | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO | Intersil Intersil Corporation | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State | Intersil Intersil Corporation | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO | Intersil Intersil Corporation | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
射頻/高頻放大 （HF）_功率放大 （L）
- 封裝形式：
直插封裝
- 極限工作電壓：
35V
- 最大電流允許值：
1A
- 最大工作頻率：
200MHZ
- 引腳數(shù)：
3
- 可代換的型號(hào)：
NTE299,2S1017,2SC1018,
- 最大耗散功率：
10W
- 放大倍數(shù)：
- 圖片代號(hào)：
A-110
- vtest：
35
- htest：
200000000
- atest：
1
- wtest：
10
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
47000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
YUNXING |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價(jià) | ||
YUNXING |
21+ |
N/A |
2500 |
進(jìn)口原裝,優(yōu)勢(shì)現(xiàn)貨 |
詢價(jià) | ||
YUNXING |
30 |
詢價(jià) | |||||
TE |
24+ |
SMD |
90 |
C23-電容器 |
詢價(jià) | ||
YUNXING |
24+ |
con |
2500 |
優(yōu)勢(shì)庫(kù)存,原裝正品 |
詢價(jià) |
