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ECQ-E2184RJB

包裝:散裝 封裝/外殼:徑向 類別:電容器 薄膜電容器 描述:CAP FILM 0.18UF 5% 250VDC RADIAL

PanasonicElectronicComponents

Panasonic Electronic Components

ECQP2184MU

PolypropyleneFilmCapacitor

PanasonicPanasonic Semiconductor

松下松下電器

ECQP2184MU

PolypropyleneFilmCapacitor

PanasonicPanasonic Semiconductor

松下松下電器

ECWF2184

MetallizedPolypropyleneFilmCapacitors

PanasonicPanasonic Semiconductor

松下松下電器

ECWF2184

MetallizedPolypropyleneFilmCapacitors

PanasonicPanasonic Semiconductor

松下松下電器

ECWF2184

MetallizedPolypropyleneFilmCapacitors

PanasonicPanasonic Semiconductor

松下松下電器

ECWF2184A

MetallizedPolypropyleneFilmCapacitors

PanasonicPanasonic Semiconductor

松下松下電器

ECWF2184JA

MetallizedPolypropyleneFilmCapacitors

PanasonicPanasonic Semiconductor

松下松下電器

ECWF2184MB

MetallizedPolypropyleneFilmCapacitor

PanasonicPanasonic Semiconductor

松下松下電器

ECWU2184KCV

FilmChipCapacitorStackedmetallizedPENfilmasdielectricwithsimplemold-lessconstruction

PANASONICBATTERYPanasonic Battery Group

松下電器松下電器(中國)有限公司

HAT2184WP

SiliconNChannelPowerMOSFETPowerSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAT2184WP-EL-E

SiliconNChannelPowerMOSFETPowerSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IR2184

HALF-BRIDGEDRIVER

Description TheIR2184(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorL

IRF

International Rectifier

IR2184

HALF-BRIDGEDRIVER

Description TheIR2184(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorL

IRF

International Rectifier

IR2184

HIGHANDLOWSIDEDRIVER

IRF

International Rectifier

IR2184

HALF-BRIDGEDRIVER

IRF

International Rectifier

IR2184

Gatedrivesupplyrangefrom10to20V

Description TheIR2184(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorL

IRF

International Rectifier

IR2184

Gatedrivesupplyrangefrom10to20V

Description TheIR2184(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorL

IRF

International Rectifier

IR2184

HALF-BRIDGEDRIVER

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IR2184PBF

HALF-BRIDGEDRIVER

Description TheIR2184(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorL

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    ECQ-E2184RJB

  • 制造商:

    Panasonic Electronic Components

  • 類別:

    電容器 > 薄膜電容器

  • 系列:

    ECQ-E(B)

  • 包裝:

    散裝

  • 容差:

    ±5%

  • 額定電壓 - DC:

    250V

  • 介電材料:

    聚酯,金屬化

  • 工作溫度:

    -40°C ~ 105°C

  • 安裝類型:

    通孔

  • 封裝/外殼:

    徑向

  • 大小 / 尺寸:

    0.406" 長 x 0.197" 寬(10.30mm x 5.00mm)

  • 高度 - 安裝(最大值):

    0.579"(14.70mm)

  • 端接:

    PC 引腳

  • 引線間距:

    0.295"(7.50mm)

  • 應(yīng)用:

    通用

  • 描述:

    CAP FILM 0.18UF 5% 250VDC RADIAL

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更多ECQ-E2184RJB供應(yīng)商 更新時(shí)間2025-1-13 23:00:00