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ET-DLE055

DLPProjector

PanasonicPanasonic Semiconductor

松下松下電器

ET-DLE055

Fixed-FocusLens

PanasonicPanasonic Semiconductor

松下松下電器

FG055

GAUSSIANFILTERS

FaradayFaraday Technology

智原科技智原科技股份有限公司

FSF055D

25A,60V,0.020Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSF055R

25A,60V,0.020Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ055D

70A,60V,0.012Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSJ055R

70A,60V,0.012Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSYC055D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscom

Intersil

Intersil Corporation

FSYC055R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscom

Intersil

Intersil Corporation

FVDB-055B

ThrrePhaseDoubleStageFilterforInvertersandPowerDrives

PREMOPREMO CORPORATION S.L

普萊默

詳細(xì)參數(shù)

  • 型號(hào)：

    ED-055

  • 制造商：

    Farnell/Pro-Power

  • 功能描述：

    EDGING GROMMET 5.5MM 10M

  • 制造商：

    pro-power

  • 功能描述：

    EDGING GROMMET, 5.5MM, 10M

  • 功能描述：

    EDGING GROMMET, 5.5MM, 10M; Panel Thickness

  • Max：

    5.5mm; Grommet

  • Material：

    PE(Polyethylene); Grommet

  • Colour：

    Natural; Accessory

  • Type：

    Grommet; Body

  • Material：

    PE(Polyethylene);

  • Colour：

    Natural; External

  • Width：

    7.9mm;

  • Material：

    PE; Panel ;RoHS

  • Compliant：

    Yes

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更多ED-055供應(yīng)商 更新時(shí)間2025-1-23 15:00:00

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