EDE1104AASE-6E-E中文資料美光科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Description

The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks.

The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (μBGA?) package.

Features

? Power supply: VDD, VDDQ = 1.8V ± 0.1V

? Double-data-rate architecture: two data transfers per clock cycle

? Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver

? DQS is edge aligned with data for READs: center aligned with data for WRITEs

? Differential clock inputs (CK and /CK)

? DLL aligns DQ and DQS transitions with CK transitions

? Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS

? 8 internal banks for concurrent operation

? Data mask (DM) for write data

? Burst lengths: 4, 8

? /CAS Latency (CL): 3, 4, 5

? Auto precharge operation for each burst access

? Auto refresh and self refresh modes

? Average refresh period

?- 7.8μs at 0°C ≤ TC ≤ +85°C

?- 3.9μs at +85°C < TC ≤ +95°C

? SSTL_18 compatible I/O

? Posted CAS by programmable additive latency for better command and data bus efficiency

? Off-Chip-Driver Impedance Adjustment and On-Die Termination for better signal quality

? Programmable RDQS, /RDQS output for making × 8 organization compatible to × 4 organization

? /DQS, (/RDQS) can be disabled for single-ended Data Strobe operation.

? FBGA (μBGA) package with lead free solder (Sn-Ag-Cu)