EDI2AG272129V10D1中文資料WEDC數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The EDI2AG272129VxxD1 is a Synchronous/ Synchronous Burst SRAM, 72 position SO DIMM (144 contacts) Module, organized as 2x128Kx72. The Module contains four (4) Synchronous Burst Ram Devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilayer FR4 Substrate. The module architecture is defi ned as a Sync/Sycn Burst, Flow-Through, with support for sequential burst. This module provides High Performance, 2-1-1-1 accesses when used in Burst Mode, and used as a Synchronous Only Mode, provides a high performance cost advantage over BiCMOS aysnchronous device architectures.

FEATURES

■ 2x128Kx72 Synchronous, Synchronous Burst

■ Flow-Through Architecture

■ Sequential Burst MODE

■ Clock Controlled Registered Bank Enables (E1#, E2#)

■ Clock Controlled Byte Write Mode Enable (BWE#)

■ Clock Controlled Byte Write Enables (BW1# - BW8#)

■ Clock Controlled Registered Address

■ Clock Controlled Registered Global Write (GW#)

■ Aysnchronous Output Enable (G#)

■ Internally self-timed Write

■ Gold Lead Finish

■ 3.3V ± 10 Operation

■ Access Speed(s): TKHQV=8.5, 9, 10, 12ns

■ Common Data I/O

■ High Capacitance (30pf) drive, at rated Access Speed

■ Single total array Clock

■ Multiple Vcc and Gnd