EDI7F2331MC120BNC中文資料WEDC數(shù)據(jù)手冊(cè)PDF規(guī)格書

FEATURES

? 1Mx32 and 2x1Mx32 Densities

? Based on AMD - AM29F080 Flash Device

? Fast Read Access Time - 80ns

? 5V Only Reprogramming

? Sector Erase Architecture

? Uniform sectors of 64 Kbytes each

? Any combination of sectors can be erased

? Also supports full chip erase

? Sector Protection

? Hardware method that disables any combination of

sectors from write or erase operations

? Embedded Erase Algorithms

? Automatically preprograms and erases the chip or

any combination of sectors

? Embedded Program Algorithms

? Automatically programs and verifies data at

specified address

? Data Polling and Toggle Bit feature for detection of

program or erase cycle completion

? Low Power Dissipation

? 60mA per Device Active Current

? 10μA per Device CMOS Standby Current

? Typical Endurance >100,000 Cycles

? Single 5V ±10 Supply

? CMOS and TTL Compatible Inputs and Outputs

? Commercial and Industrial Temperature Range

? Package

? 80 Pin SIMM (JEDEC)

DESCRIPTION

The EDI7F331MC and EDI7F2331MC are organized as one

and two banks of 1Mx32 respectively. The modules are based

on AMDs AM29F080 - 1Mx8 Flash device in TSOP packages

which are mounted on an FR4 substrate.

Both modules offer access times between 80 and 150ns

allowing for operation of high-speed microprocessors without

wait states.