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EG2235

包裝:管件 類別:開關(guān) 滑動(dòng)開關(guān) 描述:SWITCH SLIDE

E-SWITCH

E-switch

HUN2235

NPNSiliconSurfaceMountTransistorwithMonolithicBiasResistorNetwork

Description Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamonolithicbiasnetworkconsistingoftworesistors;aseriesbaseresistorandabase-emitterr

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

IR2235

3-PHASEBRIDGEDRIVER

Description TheIR2133IR2135/IR2233IR2355(J&S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverwiththreeindependenthighsideandlowsidereferencedoutputchannelsfor3-phaseapplications.ProprietaryHVICtechnologyenablesruggedizedmonolithicconstruction.Logicinputsare

IRF

International Rectifier

IR2235

3-PHASEBRIDGEDRIVER

Description TheIR2133IR2135/IR2233IR2355(J&S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverwiththreeindependenthighsideandlowsidereferencedoutputchannelsfor3-phaseapplications.ProprietaryHVICtechnologyenablesruggedizedmonolithicconstruction.Logicinputsare

IRF

International Rectifier

IR2235

FloatingchanneldesignedforbootstrapoperationFullyoperationalto600Vor1200VToleranttonegativetransientvoltagedV/dtimmune

Description TheIR2133IR2135/IR2233IR2355(J&S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverwiththreeindependenthighsideandlowsidereferencedoutputchannelsfor3-phaseapplications.ProprietaryHVICtechnologyenablesruggedizedmonolithicconstruction.Logicinputsare

IRF

International Rectifier

IR2235

3-PHASEBRIDGEDRIVER

Description TheIR2133IR2135/IR2233IR2355(J&S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverwiththreeindependenthighsideandlowsidereferencedoutputchannelsfor3-phaseapplications.ProprietaryHVICtechnologyenablesruggedizedmonolithicconstruction.Logicinputsare

IRF

International Rectifier

IR2235

3-PHASEBRIDGEDRIVER

Description TheIR2133IR2135/IR2233IR2355(J&S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverwiththreeindependenthighsideandlowsidereferencedoutputchannelsfor3-phaseapplications.ProprietaryHVICtechnologyenablesruggedizedmonolithicconstruction.Logicinputsarecom

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IR2235J

3-PHASEBRIDGEDRIVER

Description TheIR2133IR2135/IR2233IR2355(J&S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverwiththreeindependenthighsideandlowsidereferencedoutputchannelsfor3-phaseapplications.ProprietaryHVICtechnologyenablesruggedizedmonolithicconstruction.Logicinputsare

IRF

International Rectifier

IR2235J

3-PHASEBRIDGEDRIVER

Description TheIR2133IR2135/IR2233IR2355(J&S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverwiththreeindependenthighsideandlowsidereferencedoutputchannelsfor3-phaseapplications.ProprietaryHVICtechnologyenablesruggedizedmonolithicconstruction.Logicinputsarecom

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IR2235JSPBF

3-PHASEBRIDGEDRIVER

Description TheIR2133IR2135/IR2233IR2355(J&S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverwiththreeindependenthighsideandlowsidereferencedoutputchannelsfor3-phaseapplications.ProprietaryHVICtechnologyenablesruggedizedmonolithicconstruction.Logicinputsare

IRF

International Rectifier

IR2235S

3-PHASEBRIDGEDRIVER

Description TheIR2133IR2135/IR2233IR2355(J&S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverwiththreeindependenthighsideandlowsidereferencedoutputchannelsfor3-phaseapplications.ProprietaryHVICtechnologyenablesruggedizedmonolithicconstruction.Logicinputsare

IRF

International Rectifier

IR2235S

3-PHASEBRIDGEDRIVER

Description TheIR2133IR2135/IR2233IR2355(J&S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverwiththreeindependenthighsideandlowsidereferencedoutputchannelsfor3-phaseapplications.ProprietaryHVICtechnologyenablesruggedizedmonolithicconstruction.Logicinputsarecom

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

KTC2235

SILICONNPNTRANSISTOREPITAXIALPLANARTYPE(PCTPROCESS)

FEATURES ●ComplementarytoKTA965 APPLICATIONS ■AudioPowerAmplifierApplications. ■DriveStageAmplifierApplications.

KECKEC CORPORATION

KEC株式會(huì)社

MAX2235

EvaluationKit

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX2235

3.6V,1WAutorampingPowerAmplifierfor900MHzApplications

GeneralDescription TheMAX2235low-voltage,siliconRFpoweramplifier(PA)isdesignedforuseinthe900MHzfrequencyband.Itoperatesdirectlyfromasingle+2.7Vto+5.5Vsupply,makingitsuitableforusewith3-cellNiCdor1-cellLi-Ionbatteries.Thedevicedelivers+30dBm(1W)typical

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX2235EUP

3.6V,1WAutorampingPowerAmplifierfor900MHzApplications

GeneralDescription TheMAX2235low-voltage,siliconRFpoweramplifier(PA)isdesignedforuseinthe900MHzfrequencyband.Itoperatesdirectlyfromasingle+2.7Vto+5.5Vsupply,makingitsuitableforusewith3-cellNiCdor1-cellLi-Ionbatteries.Thedevicedelivers+30dBm(1W)typical

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX2235EVKIT

EvaluationKit

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MC2235

P-Channel20V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

MMUN2235

BiasResistorTransistorNPNSilicon

BiasResistorTransistor NPNSilicon P/bLead(Pb)-Free

WEITRON

Weitron Technology

MMUN2235

BiasResistorTransistor

WEITRON

Weitron Technology

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    EG2235

  • 制造商:

    E-Switch

  • 類別:

    開關(guān) > 滑動(dòng)開關(guān)

  • 系列:

    EG

  • 包裝:

    管件

  • 描述:

    SWITCH SLIDE

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
E-SWITCH
20+
開關(guān)元件
2896
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NEC
23+
全新
8293
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NEC
2023+環(huán)?,F(xiàn)貨
專業(yè)繼電器
6800
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E-SWITCH
2023+
bulk
8700
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24+
N/A
76000
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JAT
1922+
SOT
35689
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YUNXING
21+
N/A
2500
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YUNXING
500
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YUNXING
220525
con
500
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格https://www.jbchip.com/index
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YUNXING
24+
con
500
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格https://www.jbchip.com/index
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更多EG2235供應(yīng)商 更新時(shí)間2021-9-14 10:50:00