首頁>EL817(M)(B)(TD)-FVG>規(guī)格書詳情
EL817(M)(B)(TD)-FVG中文資料臺(tái)灣億光數(shù)據(jù)手冊(cè)PDF規(guī)格書
EL817(M)(B)(TD)-FVG規(guī)格書詳情
Description
The EL817 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector encapsulated with green compound. The devices are in a 4-pin DIP package and available in wide-lead spacing and SMD option
Features:
? Halogens free.
? Current transfer ratio (CTR: 50~600 at IF =5mA, VCE =5V)
? High isolation voltage between input and output (Viso=5000 V rms )
? Creepage distance >7.62 mm
? Operating temperature up to +110°C
? Compact small outline package
? Pb free and RoHS compliant.
? UL approved (No. E214129)
? VDE approved (No. 132249)
? SEMKO approved
? NEMKO approved
? DEMKO approved
? FIMKO approved
? CSA approved
? CQC approved
Applications
? Programmable controllers
? System appliances, measuring instruments
? Telecommunication equipments
? Home appliances, such as fan heaters, etc.
? Signal transmission between circuits of different potentials and impedances
