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EMB12N03VAT

N??hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS30V RDSON(MAX.)11.5mΩ ID9A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

IPD12N03L

OptiMOSBuckconverterseries

Feature ?N-Channel ?LogicLevel ?LowOn-ResistanceRDS(on) ?ExcellentGateChargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated ?Idealforfastswitchingbuckconverters

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD12N03LBG

OptiMOS?2Power-Transistor

OptiMOS?2Power-Transistor Package Marking ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPF12N03LBG

OptiMOS?2Power-Transistor

OptiMOS?2Power-Transistor Package Marking ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPS12N03LBG

OptiMOS?2Power-Transistor

OptiMOS?2Power-Transistor Package Marking ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU12N03L

OptiMOSBuckconverterseries

Feature ?N-Channel ?LogicLevel ?LowOn-ResistanceRDS(on) ?ExcellentGateChargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated ?Idealforfastswitchingbuckconverters

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU12N03LBG

OptiMOS?2Power-Transistor

OptiMOS?2Power-Transistor Package Marking ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PJ12N03D

25VN-ChannelEnhancementModeMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

SSG12N03

N-Channel20V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SSG12N03

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

SSG12N03

N-ChannelEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

YJS12N03A

N-ChannelEnhancementModeFieldEffectTransistor

YANGJIEYangzhou yangjie electronic co., ltd

揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司

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50000
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22+
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100000
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19531
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DFN33
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23+
DFN33
20000
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EMC
1706+
TO252
8660
只做原裝進(jìn)口,假一罰十
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E
18+
TO-252
85600
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E
23+
TO-252
10000
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E
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22+
6000
十年配單,只做原裝
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TO-252
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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更多EMB12N03VAT供應(yīng)商 更新時(shí)間2025-1-10 11:00:00