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EN29LV800AB-90BIP

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5

EON

Eon Silicon Solution Inc.

EN29LV800AB-90BC

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5

EON

Eon Silicon Solution Inc.

EN29LV800AB-90BCP

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5

EON

Eon Silicon Solution Inc.

EN29LV800AB-90BI

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5

EON

Eon Silicon Solution Inc.

EN29LV800AB-90TC

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5

EON

Eon Silicon Solution Inc.

EN29LV800AB-90TCP

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5

EON

Eon Silicon Solution Inc.

EN29LV800AB-90TI

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5

EON

Eon Silicon Solution Inc.

EN29LV800AB-90TIP

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5

EON

Eon Silicon Solution Inc.

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NA
39960
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EON
22+
TSOP48
2650
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49
原裝正品長(zhǎng)期供貨,如假包賠包換 徐小姐13714450367
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589610
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2022
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2058
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1024
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2021+
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6546
百分百原裝正品
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4156
原裝現(xiàn)貨海量庫存歡迎咨詢
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更多EN29LV800AB-90BIP供應(yīng)商 更新時(shí)間2024-11-14 11:02:00