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EN29LV800B70RTP中文資料宜揚(yáng)科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

廠(chǎng)商型號(hào) |
EN29LV800B70RTP |
功能描述 | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
文件大小 |
239.4 Kbytes |
頁(yè)面數(shù)量 |
43 頁(yè) |
生產(chǎn)廠(chǎng)商 | Eon Silicon Solution Inc. |
企業(yè)簡(jiǎn)稱(chēng) |
EON【宜揚(yáng)科技】 |
中文名稱(chēng) | 宜揚(yáng)科技股份有限公司 |
原廠(chǎng)標(biāo)識(shí) | ![]() |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-3-27 22:30:00 |
人工找貨 | EN29LV800B70RTP價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
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GENERAL DESCRIPTION
The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10μs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 55ns to eliminate the need for WAIT states in high-performance microprocessor systems.
FEATURES
? Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors.
? Manufactured on 0.28 μm process technology
? High performance
- Access times as fast as 70 ns
? Low power consumption (typical values at 5 MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 μA typical standby current (standard access time to active mode)
? Flexible Sector Architecture:
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors (byte mode)
- One 8 Kword, two 4 Kword, one 16 Kword and fifteen 32 Kword sectors (word mode)
- Supports full chip erase
- Individual sector erase supported
- Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors.
? High performance program/erase speed
- Byte/Word program time: 8μs typical
- Sector erase time: 500ms typical
? JEDEC Standard program and erase commands
? JEDEC standard DATA polling and toggle bits feature
? Single Sector and Chip Erase
? Sector Unprotect Mode
? Embedded Erase and Program Algorithms
? Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode
? 0.28 μm double-metal double-poly triple-well CMOS Flash Technology
? Low Vcc write inhibit < 2.5V
? >100K program/erase endurance cycle
? 48-pin TSOP (Type 1)
? Commercial Temperature Range
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
EON |
2020+ |
BGA |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢(xún)價(jià) | ||
EON |
0611+ |
BGA |
571 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
EON |
24+ |
BGA |
20000 |
全新原廠(chǎng)原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅?。?/div> |
詢(xún)價(jià) | ||
EON |
20 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢(xún)價(jià) | ||||
EONSILICO |
23+ |
NA |
8736 |
專(zhuān)做原裝正品,假一罰百! |
詢(xún)價(jià) | ||
EON |
21+ |
BGA |
571 |
原裝現(xiàn)貨假一賠十 |
詢(xún)價(jià) | ||
EON |
21+ |
BGA |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢(xún)價(jià) | ||
EON |
23+ |
BGA |
999999 |
原裝正品現(xiàn)貨量大可訂貨 |
詢(xún)價(jià) | ||
EON |
25+23+ |
BGA |
29687 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
EON |
24+ |
12 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢(xún)價(jià) |