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ENA1151

CMOS IC 2-Cell Lithium-Ion Secondary Battery Protection IC

SANYOSanyo Semicon Device

三洋三洋電機株式會社

FCX1151A

PNPSILICONPOWER(SWITCHING)TRANSISTOR

FEATURES *2WPOWERDISSIPATION *5APeakPulseCurrent *ExcellentHFECharacteristicsupto5Amps *ExtremelyLowSaturationVoltageE.g.60mvTyp. *ExtremelyLowEquivalentOn-resistance;RCE(sat)66m?at3A

Zetex

Zetex Semiconductors

FCX1151A

SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR

Features ?BVCEO>-40V ?IC=-3AHighContinuousCurrent ?ICM=-5APeakPulseCurrent ?VeryLowVCE(sat)

DIODES

Diodes Incorporated

FCX1151A

PNPSiliconPowerSwitchingTransistor

Features ●2Wpowerdissipation. ●5Apeakpulsecurrent. ●ExcellentHFEcharacteristicsupto5Amps. ●ExtremelylowsaturationvoltageE.g.60mvTyp. ●Extremelylowequivalenton-resistance.RCE(sat)66mΩat3A.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

FCX1151A

PNPPOWERTRANSISTOR

DIODES

Diodes Incorporated

FCX1151A

SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

FCX1151ATA

PNPPOWERTRANSISTOR

DIODES

Diodes Incorporated

FCX1151ATA

SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

FTB1151

TRANSISTOR(PNP)

FEATURES ●LowCollector-EmitterSaturationVoltage ●LargeCollectorCurrent ●HighPowerDissipation ●ComplementtoFTD1691

FS

First Silicon Co., Ltd

FTLC1151RDPL

10km100GBASE-LR4QSFP28OpticalTransceiverModule

Finisar

Finisar Corporation.

FTLC1151SDPL

10kmMulti-rate100GQSFP28OpticalTransceiverModule

Finisar

Finisar Corporation.

FX1151

HighStabilityShortArcXenonFlashlamps

PerkinElmer

PerkinElmer Optoelectronics

FZT1151A

PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR

Features ?BVCEO>-40V ?IC=-3AHighContinuousCollectorCurrent ?ICM=-5APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FZT1151A

PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR

FEATURES *VCEO=-40V *3AmpContinuousCurrent *5AmpPulseCurrent *LowsaturationVoltage *HighGain

Zetex

Zetex Semiconductors

FZT1151A

PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR

Features ?BVCEO>-40V ?IC=-3AHighContinuousCollectorCurrent ?ICM=-5APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FZT1151A

PNPTransistors

■Features ●CollectorCurrentCapabilityIC=-3A ●CollectorEmitterVoltageVCEO=-40V ●LowSaturationvoltage

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

FZT1151ATA

PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR

Features ?BVCEO>-40V ?IC=-3AHighContinuousCollectorCurrent ?ICM=-5APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

G1151

HeycoRubberGrommets

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

G1151

StayConnectedwithHeycoBushings,Grommets,Bumpers&Feet

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

G1151

RubberGrommets

HeycoHeyco.

海科

詳細參數(shù)

  • 型號:

    ENA1151

  • 制造商:

    SANYO

  • 制造商全稱:

    Sanyo Semicon Device

  • 功能描述:

    CMOS IC 2-Cell Lithium-Ion Secondary Battery Protection IC

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