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ENA1239

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-PurposeSwitchingDeviceApplications Features ?1.5Vdrive. ?Compositetypewith2MOSFETscontainedinasinglepackage,facilitatinghigh-densitymounting.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

ISF1239

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=96A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=27mΩ(Max)@VGS=10V APPLICATIONS ·ForSwitching ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IZ1239M

8-DIGITSCURENCYCALCULATOR

INTEGRAL

Integral Corp.

LMH1239

LMH12x912GUHDLongReachCableEqualizerwithIntegratedReclocker

1Features ?Adaptivecableequalizerwithintegratedreclocker ?SupportsST-2082-1(12G),ST-2081-1(6G), ST-424(3G),ST-292(HD),andST-259(SD) ?CompatiblewithDVB-ASIandAES10(MADI) ?Integratedreferencelessreclockerlocksto SMPTErates:11.88Gbps,5.94Gbps,2.97Gbps, 1.485Gbps,or

TI1Texas Instruments

德州儀器

LMH1239RTVR

LMH12x912GUHDLongReachCableEqualizerwithIntegratedReclocker

1Features ?Adaptivecableequalizerwithintegratedreclocker ?SupportsST-2082-1(12G),ST-2081-1(6G), ST-424(3G),ST-292(HD),andST-259(SD) ?CompatiblewithDVB-ASIandAES10(MADI) ?Integratedreferencelessreclockerlocksto SMPTErates:11.88Gbps,5.94Gbps,2.97Gbps, 1.485Gbps,or

TI1Texas Instruments

德州儀器

LMH1239RTVT

LMH12x912GUHDLongReachCableEqualizerwithIntegratedReclocker

1Features ?Adaptivecableequalizerwithintegratedreclocker ?SupportsST-2082-1(12G),ST-2081-1(6G), ST-424(3G),ST-292(HD),andST-259(SD) ?CompatiblewithDVB-ASIandAES10(MADI) ?Integratedreferencelessreclockerlocksto SMPTErates:11.88Gbps,5.94Gbps,2.97Gbps, 1.485Gbps,or

TI1Texas Instruments

德州儀器

LT1239

BackupBatteryManagementCircuit

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT1239

BackupBatteryManagementCircuit

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT1239

BackupBatteryManagementCircuit

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT1239CS

BackupBatteryManagementCircuit

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    ENA1239

  • 制造商：

    SANYO

  • 制造商全稱：

    Sanyo Semicon Device

  • 功能描述：

    P-Channel Silicon MOSFET General-Purpose Switching Device Applications

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rf-bay
24+
模塊
400
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RFbay
700
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SIS
23+
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5000
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SIS
22+
BGA
2000
進(jìn)口原裝!現(xiàn)貨庫存
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SIS
23+
BGA
33888
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VBSEMI/臺灣微碧
23+
SC-88A
50000
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BOUR
23+
1010
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BOURNS
20+
傳感器
396
就找我吧!--邀您體驗(yàn)愉快問購元件!
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Bourns
22+
NA
5889
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Bourns
24+
bianma
3460
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更多ENA1239供應(yīng)商 更新時間2025-2-24 16:44:00

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