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H11D1

Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage

FEATURES ?Veryhighcollectoremitterbreakdownvoltage? BVCEO=300V ?Isolationtestvoltage:5000VRMS ?Lowcouplingcapacitance ?Highcommonmodetransientimmunity ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 AGENCYAPPROVALS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

H11D1

PropertyofLite-OnOnly

FEATURES *Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) *Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) *VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) *Dual-in-linepackage: H11D1:1-channeltype

LITEONLite-On Technology Corporation

光寶科技光寶科技股份有限公司

H11D1

Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage

DESCRIPTION TheH11DxhasaGaAsinfraredemittingdiodeemitter, whichisopticallycoupledtoasiliconplanarphototransistor detector,andisincorporatedinaplasticDIP-6package. Itfeaturesahighcurrenttransferratio,lowcoupling capacitance,andhighisolationvoltage. Thecoup

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

H11D1

HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS

DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

H11D1

6-PinDIPOptoisolatorsHighVoltageTransistorOutput(300Volts)

TheH11D1andH11D2consistofgalliumarsenideinfraredemittingdiodesopticallycoupledtohighvoltage,silicon,phototransistordetectorsinastandard6–pinDIPpackage.Theyaredesignedforhighvoltageapplicationsandareparticularlyusefulincopymachinesandsolidstaterelays.

Motorola

Motorola, Inc

H11D1

HIGHVOLTAGEOPTICALLYCOUPLEDISOLATORPHOTOTRANSISTOROUTPUT

DESCRIPTION TheH11DseriesofopticallycoupledisolatorsconsistofinfraredlightemittingdiodeandNPNsiliconphototransistorinastandard6pindualinlineplasticpackage. FEATURES Options:- 10mmleadspread-addGafterpartno. Surfacemount-addSMafterpart

ISOCOM

ISOCOM COMPONENTS

H11D1

Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCERVoltage

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

H11D1M

6-PinDIPHighVoltagePhototransistorOptocouplers

Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor?typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six?pindual?in?linepackage. Fea

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

H11D1M

PropertyofLite-OnOnly

FEATURES *Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) *Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) *VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) *Dual-in-linepackage: H11D1:1-channeltype

LITEONLite-On Technology Corporation

光寶科技光寶科技股份有限公司

H11D1M

HighVoltagePhototransistorOptocouplers

GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

H11D1M

HighVoltagePhototransistorOptocouplers

GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

H11D1M

HighVoltagePhototransistorOptocouplers

GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

H11D1M

HighVoltagePhototransistorOptocouplers

GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

H11D1S

PropertyofLite-OnOnly

FEATURES *Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) *Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) *VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) *Dual-in-linepackage: H11D1:1-channeltype

LITEONLite-On Technology Corporation

光寶科技光寶科技股份有限公司

H11D1S

HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS

DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

H11D1SD

HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS

DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

H11D1SM

HighVoltagePhototransistorOptocouplers

GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

H11D1SM

6-PinDIPHighVoltagePhototransistorOptocouplers

Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor?typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six?pindual?in?linepackage. Fea

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

H11D1SVM

6-PinDIPHighVoltagePhototransistorOptocouplers

Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor?typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six?pindual?in?linepackage. Fea

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

H11D1TVM

6-PinDIPHighVoltagePhototransistorOptocouplers

Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor?typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six?pindual?in?linepackage. Fea

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號:

    EP11D1CGE

  • 制造商:

    C&K Components

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E-MECH
1
CK
2600
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CK
24+
600
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C&KComponents
5
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C&K
24+
SMD
90000
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JRN
23+
1104
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C&K Components
2022+
1
全新原裝 貨期兩周
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C&K
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
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C&K
20+
開關(guān)元件
2896
就找我吧!--邀您體驗愉快問購元件!
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C&K
2021+
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499
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C&K
1535+
371
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更多EP11D1CGE供應(yīng)商 更新時間2024-11-5 9:00:00