首頁(yè) >ERJXGEJ303Y>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
5NTypeLightTouchSwitches 5NTypeLightTouchSwitches ■Features ●Wealthofproducttypes:Withorwithoutagroundterminal,verticaltype,snap-interminals,etc. ●Canbeautomaticallydip-soldered:Integralmoldingoftheterminalsandmainbodypreventstheescapeofflux. ■RecommendedApplications ●Operat | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
5NTypeSide-operationalLightTouchSwitches ■Features ●Wealthofproducttypes:Horizontaltype,snap-interminals,etc. ●Canbeautomaticallydip-soldered:Integralmoldingoftheterminalsandmainbodypreventstheescapeofflux. ■RecommendedApplications ●Operatingswitchesforotherelectronicequipment | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
5NTypeSide-operationalLightTouchSwitchesWealthofproducttypes:Horizontaltype | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
STM32Nucleo-64boards | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
0805PRECISIONTHINFILMRESISTORCSP(CHIPSCALEPACKAGE) | CALMIRCO California Micro Devices Corp | CALMIRCO | ||
DigitalFET,N-Channel | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-Channel25V(D-S)MOSFET Features Verylowlevelgatedriverequirementsallowingdirect operationin3Vcircuits.VGS(th)6kV HumanBodyModel CompactindustrystandardSOT-23surfacemountpackage. VDS(V)=25V ID=2A RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | UMW | ||
N-Channel25V(D-S)MOSFET GeneralDescription Thisveryhighdensityprocessistailoredtominimizeon-state resistanceatlowgatedriveconditions.Thisdeviceisdesigned especiallyforapplicationinbatterycircuitsusingeitherone lithiumorthreecadmiumorNMHcells.Itcanbeusedasaninverter orforhigh | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
DigitalFET,N-Channel | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
N-Channel25V(D-S)MOSFET Features Verylowlevelgatedriverequirementsallowingdirect operationin3Vcircuits.VGS(th)6kV HumanBodyModel CompactindustrystandardSOT-23surfacemountpackage. VDS(V)=25V ID=2A RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | UMW | ||
N-Channel25V(D-S)MOSFET GeneralDescription Thisveryhighdensityprocessistailoredtominimizeon-state resistanceatlowgatedriveconditions.Thisdeviceisdesigned especiallyforapplicationinbatterycircuitsusingeitherone lithiumorthreecadmiumorNMHcells.Itcanbeusedasaninverter orforhigh | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
Fastrecoverytype 3.0ASurfaceMountFastRecoveryRectifiers-50-1000V Features ?Batchprocessdesign,excellentpowerdissipationoffersbetterreverseleakagecurrentandthermalresistance. ?Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. ?Highcurrentcapability. ?Fastswitchi | FORMOSAFormosa MS 美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司 | FORMOSA | ||
SURFACEMOUNTGLASSPASSIVATEDFASTRECOVERYSILICONRECTIFIER(VOLTAGERANGE50to1000VoltsCURRENT3.0Amperes) | RECTRON Rectron Semiconductor | RECTRON | ||
SurfaceMountFastRecoveryRectifiers Features: *PlasticpackagehasUnderwritersLaboratory *FlammabilityClassication94V-OUtilizingFlame *RetardantEpoxyMoldingCompound. *Forsurfacemountedapplications. *ExceedsenvironmentalstandardsofMIL-S-19500/228 *Lowleakagecurrent. | WEITRON Weitron Technology | WEITRON | ||
3A200VFastrecoverydiode | SUNMATE | |||
SURFACEMOUNTFASTRECOVERYRECTIFIERDIODES | SUNMATE | |||
ChipFastRecoveryRectifiers | FORMOSAFormosa MS 美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司 | FORMOSA | ||
Fastrecoverytype | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司 | WINNERJOIN |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
PANASONIC/松下 |
21+ |
0402metric |
448590 |
詢價(jià) |
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