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HM740

400VN-ChannelMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM740F

400VN-ChannelMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

I740

10A400VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司

INA740A

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Widecommon-moderange:–0.1Vto+85V ?High-resolution,16-bitdelta-sigmaADC ?Currentmonitoringaccuracy:A/BGrad

TI1Texas Instruments

德州儀器

INA740A

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±6.25mA/±62.5mA –Offsetdrift:±30μA/°C(AandB

TI1Texas Instruments

德州儀器

INA740B

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Widecommon-moderange:–0.1Vto+85V ?High-resolution,16-bitdelta-sigmaADC ?Currentmonitoringaccuracy:A/BGrad

TI1Texas Instruments

德州儀器

INA740B

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±6.25mA/±62.5mA –Offsetdrift:±30μA/°C(AandB

TI1Texas Instruments

德州儀器

INA740BIREMR

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±6.25mA/±62.5mA –Offsetdrift:±30μA/°C(AandB

TI1Texas Instruments

德州儀器

INA740X

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Widecommon-moderange:–0.1Vto+85V ?High-resolution,16-bitdelta-sigmaADC ?Currentmonitoringaccuracy:A/BGrad

TI1Texas Instruments

德州儀器

INA740X

INA740x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt?Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±6.25mA/±62.5mA –Offsetdrift:±30μA/°C(AandB

TI1Texas Instruments

德州儀器

詳細(xì)參數(shù)

  • 型號(hào)：

    ET-740

  • 制造商：

    ESTEK

  • 制造商全稱(chēng)：

    ESTEK

  • 功能描述：

    N-Channel MOSFET

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39960
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更多ET-740供應(yīng)商 更新時(shí)間2025-4-14 10:16:00

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