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ET4N60

600V, 4A, N-Channel Power MOSFET

ESTEKEstek Electronics Co. Ltd

伊泰克電子北京伊泰克電子有限公司

ET4N60-220F-T

600V, 4A, N-Channel Power MOSFET

ESTEKEstek Electronics Co. Ltd

伊泰克電子北京伊泰克電子有限公司

ET4N60-220-T

600V, 4A, N-Channel Power MOSFET

ESTEKEstek Electronics Co. Ltd

伊泰克電子北京伊泰克電子有限公司

ET4N60-252-R

600V, 4A, N-Channel Power MOSFET

ESTEKEstek Electronics Co. Ltd

伊泰克電子北京伊泰克電子有限公司

ET4N60-252-T

600V, 4A, N-Channel Power MOSFET

ESTEKEstek Electronics Co. Ltd

伊泰克電子北京伊泰克電子有限公司

FCD4N60

600VN-ChannelMOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCD4N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FCD4N60TF

600VN-ChannelMOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCD4N60TM

600VN-ChannelMOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCD4N60TM

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCP4N60

600VN-ChannelMOSFET

Description SuperFET?MOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowonresistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,pr

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCP4N60

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCP4N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDD4N60NZ

FDD4N60NZN-ChannelUniFETTMIIMOSFET600V,3.4A,2.5?

Description UniFET?IIMOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravalanc

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD4N60NZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDP4N60NZ

N-ChannelMOSFET600V,3.8A,2.5廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP4N60NZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDPF4N60NZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDPF4N60NZ

N-ChannelMOSFET600V,3.8A,2.5廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FIR4N60AALG

600VN-ChannelMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

詳細參數(shù)

  • 型號:

    ET4N60

  • 制造商:

    ESTEK

  • 制造商全稱:

    ESTEK

  • 功能描述:

    600V, 4A, N-Channel Power MOSFET

供應商型號品牌批號封裝庫存備注價格
MOSIET
23+
SOT-163
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
MOSIET
22+
SOT-163
50000
只做原裝假一罰十,歡迎咨詢
詢價
MOSIET
23+
NA/
5272
原裝現(xiàn)貨,當天可交貨,原型號開票
詢價
MOSIET
23+
SOT-163
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
24+
LLP8
3629
原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電!
詢價
24+
N/A
70000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
KleinTools
5
全新原裝 貨期兩周
詢價
Klein Tools
2022+
1
全新原裝 貨期兩周
詢價
PH
23+
920
詢價
ET
00+/01+
TQFP
358
全新原裝100真實現(xiàn)貨供應
詢價
更多ET4N60供應商 更新時間2024-12-24 11:00:00