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零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
F1221 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet Polyfet RF Devices | Polyfet | |
speciallydesignedforhighefficientdischargeapplication | CSB-BATTERYCSB Battery Co., Ltd. 希世比能源希世比能源科技股份有限公司 | CSB-BATTERY | ||
speciallydesignedforhighefficientdischargeapplication | CSB-BATTERYCSB Battery Co., Ltd. 希世比能源希世比能源科技股份有限公司 | CSB-BATTERY | ||
OUTLINE2-WAY | IPP Innovative Power Products, Inc. | IPP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.16Ω(Max)@VGS=10V DESCRIPTION ·SwitchModePowerSupply(SMPS) ·UPS ·PFC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
LowPowerRTCwithBatteryBacked LowPowerRTCwithBatteryBackedSRAMandEventDetection TheISL1221deviceisalowpowerrealtimeclockwithEventDetectandTimeStampfunction,timingandcrystalcompensation,clock/calendar,powerfailindicator,periodicorpolledalarm,intelligentbatterybackupswitchingwithsepara | Intersil Intersil Corporation | Intersil | ||
LowPowerRTCwithBatteryBackedSRAMandEventDetection LowPowerRTCwithBatteryBackedSRAMandEventDetection TheISL1221deviceisalowpowerrealtimeclockwithEventDetectandTimeStampfunction,timingandcrystalcompensation,clock/calendar,powerfailindicator,periodicorpolledalarm,intelligentbatterybackupswitchingwithsepara | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
High-AccuracyRTCModules,Feature-RichRTCs | Intersil Intersil Corporation | Intersil | ||
Providinghigh-performancesolutionsforeverylinkinthesignalchain | Intersil Intersil Corporation | Intersil | ||
LowPowerRTCwithBatteryBacked LowPowerRTCwithBatteryBackedSRAMandEventDetection TheISL1221deviceisalowpowerrealtimeclockwithEventDetectandTimeStampfunction,timingandcrystalcompensation,clock/calendar,powerfailindicator,periodicorpolledalarm,intelligentbatterybackupswitchingwithsepara | Intersil Intersil Corporation | Intersil | ||
LowPowerRTCwithBatteryBackedSRAMandEventDetection LowPowerRTCwithBatteryBackedSRAMandEventDetection TheISL1221deviceisalowpowerrealtimeclockwithEventDetectandTimeStampfunction,timingandcrystalcompensation,clock/calendar,powerfailindicator,periodicorpolledalarm,intelligentbatterybackupswitchingwithsepara | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
LowPowerRTCwithBatteryBacked LowPowerRTCwithBatteryBackedSRAMandEventDetection TheISL1221deviceisalowpowerrealtimeclockwithEventDetectandTimeStampfunction,timingandcrystalcompensation,clock/calendar,powerfailindicator,periodicorpolledalarm,intelligentbatterybackupswitchingwithsepara | Intersil Intersil Corporation | Intersil | ||
LowPowerRTCwithBatteryBackedSRAMandEventDetection LowPowerRTCwithBatteryBackedSRAMandEventDetection TheISL1221deviceisalowpowerrealtimeclockwithEventDetectandTimeStampfunction,timingandcrystalcompensation,clock/calendar,powerfailindicator,periodicorpolledalarm,intelligentbatterybackupswitchingwithsepara | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-ChannelSiliconPowerMOS-FET N-CHANNELSILICONPOWERMOS-FET | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
LowFrequencyPowerAmplifier LowFrequencyPowerAmplifier ?LowCollector-EmitterSaturationVoltage ?ComplementtoKSB906 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.7V(Max)@IC=3A ·ComplementtoKSB906 APPLICATIONS ·Lowfrequencyamplifier | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerTransducerSeriesL-UNIT | MSYSTEMM-System Co.,Ltd. 愛模愛模系統(tǒng)有限公司 | MSYSTEM | ||
PowerTransducerSeriesL-UNIT | MSYSTEMM-System Co.,Ltd. 愛模愛模系統(tǒng)有限公司 | MSYSTEM | ||
150MHz,250V/ms,A4OperationalAmplifier | LINERLinear Technology 凌力爾特凌特半導(dǎo)體 | LINER | ||
150MHzOperationalAmplifier | LINERLinear Technology 凌力爾特凌特半導(dǎo)體 | LINER |
詳細(xì)參數(shù)
- 型號:
F1221
- 制造商:
POLYFET
- 制造商全稱:
Polyfet RF Devices
- 功能描述:
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
POLYFET |
23+ |
高頻管 |
350 |
專營高頻管模塊,全新原裝! |
詢價 | ||
POLYFET |
24+ |
155 |
現(xiàn)貨供應(yīng) |
詢價 | |||
POLYFET |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
MIT |
23+ |
QFN |
3000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
TI |
23+ |
QFN-32 |
28108 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
LED |
23+ |
2013+ |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
LED |
23+ |
2013+ |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
MORNSUN |
2023+ |
DIP |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
MORNSUN/GANMA |
21+ |
13 |
35200 |
一級代理/放心采購 |
詢價 | ||
MONRSUN |
1822+ |
DIP |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 |
相關(guān)規(guī)格書
更多- F1222
- F12237_OSLO-CLUSTER-W
- F122450NC3B
- F122450NC5B
- F122450NC8B
- F122450NC9B
- F1224XES-2W
- F1225
- F1225PFV28--GRZ
- F122600QC3B
- F122600QC5B
- F122600QC8B
- F122600QC9B
- F12-2850
- F12-2850-C2-B
- F122K47S3NP63K7R
- F-122X
- F-1230
- F1230PFV28--GRK
- F12355-000
- F1235PFV18--GRZ
- F1238E12B1+6-FSR
- F124
- F12410007
- F12410159
- F12410163
- F12410271
- F12420038
- F124MB
- F-124X
- F12-500
- F12-500-C2-B
- F1250AA03
- F1250AA10
- F1250BB01
- F1250BB06
- F1250CA03
- F1250CA10
- F1250T
- F1250T-RP
- F125600
- F1257
- F1257WV-10P-T
- F1257WV-11P-T
- F1257WV-13P-T
相關(guān)庫存
更多- F12237 OSLO-CLUSTER-W-OSL
- F122450CC9B
- F122450NC3D
- F122450NC5D
- F122450NC8D
- F122450NC9D
- F1224XMD-1W
- F1225PFV18--GRQ
- F12-25R12KT4G
- F122600QC3D
- F122600QC5D
- F122600QC8D
- F122600QC9D
- F12-2850-C2
- F122K39S3NN63J5R
- F122K59S3NR63K0R
- F123
- F1230PFV18--GRZ
- F12338-000
- F1235PFU28--GRK
- F12-35R12KT4G
- F1238E12B1-FHR
- F1240
- F12410145
- F12410161
- F12410267
- F12410338
- F12420053
- F124NB
- F125
- F12-500-C2
- F1250AA01
- F1250AA06
- F1250AA20
- F1250BB03
- F1250BB10
- F1250CA06
- F1250DD20
- F1250TRP
- F1251T
- F125600-B
- F1257WV-10P
- F1257WV-11P
- F1257WV-13P
- F1257WV-14P