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MDD1951

SingleN-ChannelTrenchMOSFET60V,17.9A,45.0m(ohm)

MGCHIP

MagnaChip Semiconductor.

MDD1951RH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=17.9A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=45mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDD1951RH

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MDD1951RH

SingleN-ChannelTrenchMOSFET60V,17.9A,45.0m(ohm)

MGCHIP

MagnaChip Semiconductor.

MDS1951

SingleN-ChannelTrenchMOSFET60V,6A,45m(ohm)

MGCHIP

MagnaChip Semiconductor.

MDS1951URH

SingleN-ChannelTrenchMOSFET60V,6A,45m(ohm)

MGCHIP

MagnaChip Semiconductor.

MDV1951B

SingleN-channelTrenchMOSFET60V,12A,45m(ohm)

MGCHIP

MagnaChip Semiconductor.

MDV1951BURH

SingleN-channelTrenchMOSFET60V,12A,45m(ohm)

MGCHIP

MagnaChip Semiconductor.

MGF1951A

MediumPowerMicrowaveMESFET

DESCRIPTION TheMGF1951Aisa20mWMESFETforS-toKu-banddriveramplifiersandoscillators. Itslead-lessceramicpackageassuresminimumparasitics. FEATURES ?HighGainandHighOutputPowerGLP=9dB,P1dB=13dBm(typ)@f=12GHz ?LeadlessCeramicPackage APPLICATION S-

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

MGF1951A

MicrowavePowerMESFET

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

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22+
VFQFPN
24500
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IDT
24+
QFN
17900
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IDT
1844+
QFN
9852
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IDT,
20+
24-WFQFN
1128
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IDT
1931+
N/A
928
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RENESAS(瑞薩)/IDT
2447
WFQFN-24
315000
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IDT
20+
射頻元件
2255
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IDT
23+
QFN
50000
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22+
NA
928
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25+
VQFN24
5000
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更多F1951供應(yīng)商 更新時(shí)間2025-4-16 18:52:00

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