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FS276

2phasehighvoltageDCMotorDriverIC

FEELINGFeeling Technology Corp.

遠(yuǎn)翔科技遠(yuǎn)翔科技股份有限公司

FS276LF-A

2phasehighvoltageDCMotorDriverIC

FEELINGFeeling Technology Corp.

遠(yuǎn)翔科技遠(yuǎn)翔科技股份有限公司

FS276LF-Bu

2phasehighvoltageDCMotorDriverIC

FEELINGFeeling Technology Corp.

遠(yuǎn)翔科技遠(yuǎn)翔科技股份有限公司

FS276LF-C

2phasehighvoltageDCMotorDriverIC

FEELINGFeeling Technology Corp.

遠(yuǎn)翔科技遠(yuǎn)翔科技股份有限公司

FW276

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

G276P

ComplementaryOutputHallEffectLatchedSinkDriverIC

GTM

勤益投資控股股份有限公司

G276P

ComplementaryOutputHallEffectLatchedSinkDriverIC

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

HSB276AS

SiliconSchottkyBarrierDiodeforBalancedMixer

Features ?Highforwardcurrent,Lowcapacitance. ?HSB276ASwhichisinterconnectedinseriesconfigurationisdesignedforbalancedmixeruse. ?CMPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

HitachiHitachi Semiconductor

日立日立公司

HSB276AS

SiliconSchottkyBarrierDiodeforBalancedMixer

Features ?Highforwardcurrent,Lowcapacitance. ?HSB276ASwhichisinterconnectedinseriesconfigurationisdesignedforbalancedmixeruse. ?CMPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HSB276AS

SiliconSchottkyBarrierDiode

Features ?Highforwardcurrent,Lowcapacitance. ?HSB276ASwhichisinterconnectedinseriesconfigurationisdesignedforbalancedmixeruse. ?CMPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

HSB276AYP

SILICONSCHOTTKYBARRIERDIODEFORHIGHSPEEDSWITCHING

Features ?Highforwardcurrent,Lowcapacitance. ?CMPAK-4Packageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi Semiconductor

日立日立公司

HSB276AYP

SiliconSchottkyBarrierDiodeforHighSpeedSwitching

Features ?Highforwardcurrent,Lowcapacitance. ?CMPAK-4Packageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HSB276S

SiliconSchottkyBarrierDiodeforBalancedMixer

Features ?Highforwardcurrent,Lowcapacitance. ?HSB276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. ?CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi Semiconductor

日立日立公司

HSB276S

SiliconSchottkyBarrierDiodeforDetectorandMixer

Features ?Highforwardcurrent,Lowcapacitance. ?HSB276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. ?CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HSB276S

SiliconSchottkyBarrierDiode

Features ●Highforwardcurrent,Lowcapacitance. ●HSB276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. ●CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

HSC276

SiliconSchottkyBarrierDiodeforMixer

Features ?Highforwardcurrent,Lowcapacitance. ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HSC276

HSC276_03

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HSC276

SiliconSchottkyBarrierDiode

Features ●Highforwardcurrent,Lowcapacitance. ●UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

HSC276A

SiliconSchottkyBarrierDiodeforMixer

Features ?Highforwardcurrent,Lowcapacitance. ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HSC276A

SiliconSchottkyBarrierDiodeforMixer

Features ?Highforwardcurrent,Lowcapacitance. ?UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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