F28F010-120中文資料英特爾數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

28F010 1024K (128K X 8) CMOS FLASH MEMORY

Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases memory flexibility, while contributing to time and cost savings.

■ Flash Electrical Chip-Erase

? - 1 Second Typical Chip-Erase

■ Quick-Pulse Programming Algorithm

? - 10 μs Typical Byte-Program

? - 2 Second Chip-Program

■ 100,000 Erase/Program Cycles

■ 12.0 V ±5 VPP

■ High-Performance Read

? - 90 ns Maximum Access Time

■ CMOS Low Power Consumption

? - 10 mA Typical Active Current

? - 50 μA Typical Standby Current

? - 0 Watts Data Retention Power

■ Integrated Program/Erase Stop Timer

■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

■ Noise Immunity Features

? - ±10 VCC Tolerance

? - Maximum Latch-Up Immunity through EPI Processing

■ ETOX? Nonvolatile Flash Technology

?- EPROM-Compatible Process Base

? - High-Volume Manufacturing Experience

■ JEDEC-Standard Pinouts

?- 32-Pin Plastic Dip

?- 32-Lead PLCC

? - 32-Lead TSOP

(See Packaging Spec., Order #231369)

■ Extended Temperature Options