FDN352

P-Channel30V(D-S)MOSFET

Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■Highperformancetrenchtechnologyforextremelylow RDS(ON). ■HighpowerversionofindustryStandardSOT-23package. Identicalpin-outtoSOT-23with30higherpowerhandling capability.

FDN352

P-Channel30V(D-S)MOSFET

GeneralDescription Thesedevicesarewellsuitedforlowvoltageandbatterypowered applicationswherelowin-linepowerlossisneededina verysmalloutlinesurfacemountpackage. Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■High

FDN352AP

SingleP-Channel,PowerTrench

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductoradvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ■–1.3A,–30

FDN352AP

SingleP-Channel,PowerTrenchMOSFET

FDN352AP

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-1.3A(VGS=-10V) ●RDS(ON)

FDN352AP

P-Channel30V(D-S)MOSFET

Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■Highperformancetrenchtechnologyforextremelylow RDS(ON). ■HighpowerversionofindustryStandardSOT-23package. Identicalpin-outtoSOT-23with30higherpowerhandling capability.

FDN352AP

P-Channel30V(D-S)MOSFET

GeneralDescription Thesedevicesarewellsuitedforlowvoltageandbatterypowered applicationswherelowin-linepowerlossisneededina verysmalloutlinesurfacemountpackage. Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■High

FDN352AP-HF

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-1.3A(VGS=-10V) ●RDS(ON)

FN-352-Z

Multi-stageEMIFilter

FODM352

PhotodarlingtonOptocouplerwithaBase-EmitterResistorina4-PinFullPitchMini-FlatPackage