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HIP9010AB

EngineKnockSignalProcessor

TheHIP9010isusedtoprovideamethodofdetectingprematuredetonationor“Knock”inautomotiveengines. AblockdiagramofthisICisshowninFigure1.Thechipalternatelyselectsoneofthetwosensorsmountedontheengineblock.Twoprogrammablebandpassfiltersprocessthesignalfromb

Intersil

Intersil Corporation

IL9010D

ICofcollectorelectricmotorcontroller

INTEGRAL

Integral Corp.

IL9010N

ICofcollectorelectricmotorcontroller

INTEGRAL

Integral Corp.

IRFD9010

HEXFET?TRANSISTORSP-CHANNELHEXDIP?

HEXFET?TRANSISTORSP-CHANNELHEXDIP? 1-WATTTRATEDPOWERMOSFETsINA4-PIN,DUAL-IN-LINEPACKAGE FEATURES ■ForAutomaticInsertion ■Compact,EndStackable ■FastSwitching ■LowDriveCurrent ■EasyParalleled ■ExcellentTemperatureStability ■P-ChannelVersatility

IRF

International Rectifier

IRFD9010

PowerMOSFET

DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES ?ForAutomatic

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010

P-CHANNELPOWERMOSFETS

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFR9010

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR9010

PowerMOSFET

DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010PBF

PowerMOSFET

DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

晶體管資料

  • 型號(hào):

    F9010...9022

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N/P

  • 性質(zhì):

    通用型 (Uni)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    50V

  • 最大電流允許值:

    0.2A

  • 最大工作頻率:

    300MHZ

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

  • 最大耗散功率:

    0.5W

  • 放大倍數(shù):

    β=900

  • 圖片代號(hào):

    A-20

  • vtest:

    50

  • htest:

    300000000

  • atest:

    0.2

  • wtest:

    0.5

詳細(xì)參數(shù)

  • 型號(hào):

    F9010

  • 制造商:

    Thomas & Betts

  • 功能描述:

    NON-INS FERRULE 16, 1.5 MM2, LG .70

  • 功能描述:

    Ferrules Terminal 16AWG

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更多F9010供應(yīng)商 更新時(shí)間2025-4-16 16:26:00