| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
HERMETICALLYSEALEDELECTROMAGNETICRELAY | HONGFAHongfa Technology 宏發(fā)電聲廈門(mén)宏發(fā)電聲股份有限公司 | HONGFA | ||
MultilevelPipelineRegisters ThesedevicesaremultilevelpipelineregistersimplementedusingalowpowerCMOSprocess.TheyarepinforpincompatiblereplacementsforindustrystandardmultilevelpipelineregisterssuchastheL29C520andL29C521.TheHSP9520andHSP5921aredirectreplacementsfortheAM29520andAM29521 | Intersil Intersil Corporation | Intersil | ||
MultilevelPipelineRegisters ThesedevicesaremultilevelpipelineregistersimplementedusingalowpowerCMOSprocess.TheyarepinforpincompatiblereplacementsforindustrystandardmultilevelpipelineregisterssuchastheL29C520andL29C521.TheHSP9520andHSP5921aredirectreplacementsfortheAM29520andAM29521 | Intersil Intersil Corporation | Intersil | ||
MultilevelPipelineRegisters ThesedevicesaremultilevelpipelineregistersimplementedusingalowpowerCMOSprocess.TheyarepinforpincompatiblereplacementsforindustrystandardmultilevelpipelineregisterssuchastheL29C520andL29C521.TheHSP9520andHSP5921aredirectreplacementsfortheAM29520andAM29521 | Intersil Intersil Corporation | Intersil | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
FastSwitching DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
6A,100V,0.600Ohm,P-ChannelPowerMOSFET 6A,100V,0.600Ohm,P-ChannelPowerMOSFET ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicati | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-6.8A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.48ohm,Id=-6.8A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.48ohm,Id=-6.8A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPOWERMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.48ohm,Id=-6.8A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
13 |
詢價(jià) | |||
IR/INFINEON |
23+ |
TO-220 |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
IR |
23+ |
0635+ |
6500 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
0635+ |
6500 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
FSC |
22+ |
CDIP16 |
5000 |
進(jìn)口原裝!現(xiàn)貨庫(kù)存 |
詢價(jià) | ||
FSC |
23+ |
CDIP |
1100 |
專業(yè)優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
APTIV/安波福 |
22+ |
SMD |
518000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
1738+ |
TO-220 |
8529 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價(jià) | ||
IR |
2023+ |
0537+ |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
IR |
24+ |
0537+ |
35200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) |
相關(guān)規(guī)格書(shū)
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