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IRF9Z24

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z24

P-CHANNELPOWERMOSFETs

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightmeperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9Z24

POWERMOSFET

Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissi

IRF

International Rectifier

IRF9Z24

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z24

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF9Z24

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z24

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-11A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF9Z24L

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9Z24L

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z24L

PowerMOSFET(Vdss=-60V,Rds(on)=0.28ohm,Id=-11A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
23+
TO-263
83772
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
IR
22+
SOT23
8000
原裝正品支持實(shí)單
詢價(jià)
IR
22+
SOT23
6000
終端可免費(fèi)供樣,支持BOM配單
詢價(jià)
IR
23+
SOT23
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
IR
2025+
SOT23
3785
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
詢價(jià)
IR
23+
SOT23
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
IR
23+
SOT23
7000
詢價(jià)
IR
23+
TO-220
3000
全新原裝
詢價(jià)
IR
23+
原廠封裝
11888
專做原裝正品,假一罰百!
詢價(jià)
IR
2022+
32
全新原裝 貨期兩周
詢價(jià)
更多F9Z24S供應(yīng)商 更新時(shí)間2025-3-1 11:10:00