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FBB3139K

Plastic-Encapsulate MOSFETs

FEATURE LeadFreeProductisAcquired SurfaceMountPackage P-ChannelSwitchwithLowRDS(on) OperatedatLowLogicLevelGateDrive ESDProtectedGate APPLICATION Load/PowerSwitching InterfacingSwitching BatteryManagementforUltraSmall PortableElectronics LogicLevelSh

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FTK3139E

P-ChannelMOSFET

FS

First Silicon Co., Ltd

FTK3139K

P-ChannelMOSFET

FS

First Silicon Co., Ltd

IPP-3139

DUALDIRECTIONALCOUPLER

IPP

Innovative Power Products, Inc.

LM3139

P-Channel1.8-V(G-S)MOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

MS3139

MilitaryStandardConnectorIndex

ThefollowingisalistingofcircularconnectorsdefinedbyUSMilitarySpecifications,cross-referencedtotheapplicableactiveorinactivepartnumberseries.ThesymbolsintheConnectorDesignatorcolumnareanessentialelementinGlenair’sbackshellpartnumberdevelopments.

GLENAIR

Glenair, Inc.

NTE3139

LightEmittingDiode−1.8mm

Features: ?AllPlasticMoldTypew/WaterClearLens: NTE3133(SuperYellow?Green,AllGaP/GaAs) NTE3135(Orange,AllnGaPl/GaAs) NTE3136(SuperOrange,AllnGaP/GaAs) NTE3138(SuperRed,GaAIAs/GaAIAs) NTE3139(SuperBlue,GaAIAs/GaAIAs)

NTE

NTE Electronics

NTK3139P

PowerMOSFET??0V,??80mA,SingleP??hannelwithESDProtection,SOT??23

PowerMOSFET?20V,?780mA,SingleP?ChannelwithESDProtection,SOT?723 Features ?P?channelSwitchwithLowRDS(on) ?44SmallerFootprintand38ThinnerthanSC?89 ?LowThresholdLevelsAllowing1.5VRDS(on)Rating ?OperatedatLowLogicLevelGateDrive ?TheseDevicesarePb?Free,

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PE3139

CABLEASSEMBLYRG316/USSMBPLUGTOSSMBPLUG

PASTERNACK

Pasternack Enterprises, Inc.

PE3139LF

cableassembly,rg316/u,ssmbplugtossmbplug(leadfree)

PASTERNACK

Pasternack Enterprises, Inc.

PST3139

CMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25μAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25μAtyp.(whenVDD

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會(huì)社

PST3139

ICforCMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25μAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25μAtyp.(whenVDD

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會(huì)社

RM3139K

P-ChannelMOSFET

FEATURE LeadFreeProductisAcquired SurfaceMountPackage P-ChannelSwitchwithLowRDS(on) OperatedatLowLogicLevelGateDrive

RECTRON

Rectron Semiconductor

SCG3139K

-0.66A,-20V,RDS(O)520m(ohm)PChannelEnhancementMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SCG3139K-C

P-ChannelEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SGM3139

UltraLowDropoutCurrentSource

SGMICROSG Micro Corp

圣邦股份圣邦微電子（北京）股份有限公司

SSF3139K-C

P-ChannelEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SSI3139J

DualP-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SSN3139K

PChannelEnhancementMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SSN3139K-C

P-ChannelEnhancementMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

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