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FDB304

3AMPFASTRECOVERYBRIDGERECTIFIERS

DEC

DIOTEC Electronics Corporation

FDN304P

P-Channel1.8VSpecifiedPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN304P

P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features ?–2.4A,–20V.RDS(ON)=52m?@VGS=–4.5VRDS(ON)=70m?@VGS=–2.5VRDS(ON)=100m?@VGS=–

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN304P

P-ChannelMOSFET

■Features ●VDS(V)=-20V ●ID=-2.4A(VGS=-4.5V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

FDN304P

POWERMOSFET-3A,-16VP-CHANNEL

DESCRIPTION The FDN304PisavailableinSOT23package FEATURES ?-16V/-3A RDS(ON)=160mΩ(Max)@VGS=-4.5V RDS(ON)=240mΩ(Max)@VGS=-2.5V ?SuperHighdensecelldesignforextremelylowRDS(ON) ?ReliableandRugged ?AvailableinSOT23package APPLICATION ?PowerManagement

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

FDN304P

P-Channel1.8VSpecifieddPowerTrenchMosfet

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

FDN304P

SOT-23Plastic-EncapsulateMOSFETS

FEATURE ●TrenchFETPowerMOSFET ●Supperhighdensitycelldesign

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDN304P

P-ChannelMOSFET

Features –2.4A,–20V.RDS(ON)=0.052Ω@VGS=–4.5V RDS(ON)=0.070Ω@VGS=–2.5V RDS(ON)=0.100Ω@VGS=–1.8V Fastswitchingspeed Highperformancetrenchtechnologyforextremely lowRDS(ON) SuperSOTTM-3provideslowRDS(ON)and30higher powerhandlingcapabilitythanSOT23

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDN304P-NL

P-Channel30V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

FDN304PZ

P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features ·–2.4A,–20V.RDS(ON)=52mW@VGS=–4.5V RDS(ON)=70mW@VGS=–2.5V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN304PZ-NL

P-Channel30V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

FDV304

DigitalFET,P-Channel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDV304P

DigitalFET,P-Channel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDV304P

P-ChannelEnhancementMOSFET

■Features ●VDS(V)=-30V ●ID=-4.2A(VGS=-10V) ●RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDV304P

P-ChannelEnhancementMOSFET

Features VDS(V)=-30V ID=-4.2A(VGS=-10V) RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDV304P-NL

P-Channel20-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

FFM304

SURFACEMOUNTGLASSPASSIVATEDFASTRECOVERYSILICONRECTIFIER(VOLTAGERANGE50to1000VoltsCURRENT3.0Amperes)

RECTRON

Rectron Semiconductor

FFM304

Fastrecoverytype

3.0ASurfaceMountFastRecoveryRectifiers-50-1000V Features ?Batchprocessdesign,excellentpowerdissipationoffersbetterreverseleakagecurrentandthermalresistance. ?Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. ?Highcurrentcapability. ?Fastswitchi

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

FFM304

SurfaceMountFastRecoveryRectifiers

Features: *PlasticpackagehasUnderwritersLaboratory *FlammabilityClassication94V-OUtilizingFlame *RetardantEpoxyMoldingCompound. *Forsurfacemountedapplications. *ExceedsenvironmentalstandardsofMIL-S-19500/228 *Lowleakagecurrent.

WEITRON

Weitron Technology

FFM304

3A400VFastrecoverydiode

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

PDF上傳者：深圳市福田區(qū)吉富昌電子商行

詳細(xì)參數(shù)

  • 型號(hào)：

    FBJ304SOC

  • 制造商：

    Ferraz Shawmut

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65480
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更多FBJ304SOC供應(yīng)商 更新時(shí)間2025-1-12 11:09:00

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