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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
FCP4N60	文件：851.73 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description SuperFET?MOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowonresistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,pr	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FCP4N60	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FCP4N60	文件：335.99 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FDD4N60NZ	文件：321.55 Kbytes Page：8 Pages	FDD4N60NZN-ChannelUniFETTMIIMOSFET600V,3.4A,2.5? Description UniFET?IIMOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravalanc	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD4N60NZ	文件：299.41 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FDP4N60NZ	文件：383.72 Kbytes Page：10 Pages	N-ChannelMOSFET600V,3.8A,2.5廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDP4N60NZ	文件：333.41 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=3.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FDPF4N60NZ	文件：324.1 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=3.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FDPF4N60NZ	文件：383.72 Kbytes Page：10 Pages	N-ChannelMOSFET600V,3.8A,2.5廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FIR4N60AALG	文件：2.98034 Mbytes Page：9 Pages	600VN-ChannelMOSFET	FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司	FOSTER
FIR4N60ABPG	文件：2.98034 Mbytes Page：9 Pages	600VN-ChannelMOSFET	FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司	FOSTER
FIR4N60AFG	文件：3.21726 Mbytes Page：8 Pages	600VN-ChannelMOSFET	FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司	FOSTER
FMF4N60	文件：783.1 Kbytes Page：7 Pages	4A600VNCHANNELISOLATEDPOWERMOSFET	FCIFirst Components International 戈采戈采企業(yè)股份有限公司	FCI
FQB4N60	文件：539.35 Kbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQI4N60	文件：539.35 Kbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP4N60	文件：530.09 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF4N60	文件：36.43 Kbytes Page：1 Pages	600VN-ChannelMOSFET DESCRIPTION TheseN-Channelenhancementmodepowerfieldeffecttransistorsareproducedusingproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulse	TGS Tiger Electronic Co.,Ltd	TGS
FQPF4N60	文件：550.26 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF4N60	文件：831.98 Kbytes Page：8 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF4N60	文件：726.33 Kbytes Page：7 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperform	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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詳細(xì)參數(shù)

型號(hào)：
FCD4N60TM_WS
功能描述：
MOSFET 600V 3.9A N-Channel
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	FCD4N60TM_WS	Fairchild	24+	TO-252	7500		詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	FCD4N60TM_WS	FAIRCHILD仙童	23+	DPAK	10000	公司只做原裝正品	詢價(jià)
深圳市河鋒鑫科技有限公司	FCD4N60TM_WS	Fairchild/ON	22+	TO2523 DPak (2 Leads + Tab) SC	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
深圳市芯福林電子科技有限公司	FCD4N60TM_WS	Fairchild/ON	21+	TO2523 DPak (2 Leads + Tab) SC	13880	公司只售原裝,支持實(shí)單	詢價(jià)
深圳市鵬順微電子科技有限公司	FCD4N60TM_WS	ON Semiconductor	2022+	TO-252-3,DPak(2 引線 + 接片	38550	全新原裝支持表配單中國(guó)著名電子元器件獨(dú)立分銷	詢價(jià)
深圳市躍創(chuàng)芯科技有限公司	FCD4N60TM_WS	Fairchild仙童	22+	DPAK	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價(jià)
深圳市旺財(cái)半導(dǎo)體有限公司	FCD4N60TM_WS	Fairchild	23+		33500		詢價(jià)
深圳市創(chuàng)新跡電子有限公司	FCD4N60TM_WS	Fairchild仙童	22+	DPAK	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價(jià)
深圳市宏捷佳電子科技有限公司	FCD4N60TM_WS	Fairchild仙童	24+	DPAK	12300	獨(dú)立分銷商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
深圳市博浩通科技有限公司	FCD4N60TMCT	Fairchild	23+	TO-252AA	7750	全新原裝優(yōu)勢(shì)	詢價(jià)

更多FCD4N60TM_WS供應(yīng)商更新時(shí)間2024-11-7 16:30:00

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