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    FCD9N60NTM
    isc N-Channel MOSFET Transistor
    
FEATURES
·DrainCurrent:ID=9A@TC=25℃
·DrainSourceVoltage
:VDSS=600V(Min)
·StaticDrain-SourceOn-Resistance
:RDS(on)=385mΩ(Max)@VGS=10V
·100avalanchetested
·MinimumLot-to-Lotvariationsforrobustdevice
performanceandreliableoperation

DESCRIPTION
·motordrive,DC-D
    ISCInchange Semiconductor Company Limited
    無錫固電無錫固電半導(dǎo)體股份有限公司
    

    FCD9N60NTM
    N-Channel MOSFET
    FairchildFairchild Semiconductor
    仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司
    

    FCP9N60N
    N-ChannelMOSFET600V,9A,0.385廓
    FairchildFairchild Semiconductor
    仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司
    

    FCP9N60N
    iscN-ChannelMOSFETTransistor
    
FEATURES
·DrainCurrent:ID=9A@TC=25℃
·DrainSourceVoltage
:VDSS=600V(Min)
·StaticDrain-SourceOn-Resistance
:RDS(on)=385mΩ(Max)@VGS=10V
·100avalanchetested
·MinimumLot-to-Lotvariationsforrobustdevice
performanceandreliableoperation

DESCRIPTION
·motordrive,DC-D
    ISCInchange Semiconductor Company Limited
    無錫固電無錫固電半導(dǎo)體股份有限公司
    

    FCPF9N60NT
    N-ChannelSupreMOS?MOSFET
    FairchildFairchild Semiconductor
    仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司
    

    FCPF9N60NT
    N-ChannelMOSFET600V,9A,0.385廓
    FairchildFairchild Semiconductor
    仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司
    

    FCPF9N60NT
    iscN-ChannelMOSFETTransistor
    
FEATURES
·DrainCurrent:ID=9A@TC=25℃
·DrainSourceVoltage
:VDSS=600V(Min)
·StaticDrain-SourceOn-Resistance
:RDS(on)=385mΩ(Max)@VGS=10V
·100avalanchetested
·MinimumLot-to-Lotvariationsforrobustdevice
performanceandreliableoperation

DESCRIPTION
·motordrive,DC-D
    ISCInchange Semiconductor Company Limited
    無錫固電無錫固電半導(dǎo)體股份有限公司
    

    IRFB9N60
    PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A)
    
Description
ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.
TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower
    IRF
    International Rectifier
    

    IRFB9N60A
    PowerMOSFET
    VishayVishay Siliconix
    威世科技威世科技半導(dǎo)體
    

    IRFB9N60A
    iscN-ChannelMOSFETTransistor
    ISCInchange Semiconductor Company Limited
    無錫固電無錫固電半導(dǎo)體股份有限公司
    

    
            
    
		
        
    
            
    
                
    詳細(xì)參數(shù)
    
            
    
            
      
            	
    • 型號(hào)：
      FCD9N60NTM
    • 功能描述：
      MOSFET 600V N-Channel SupreMOS 
    • RoHS：
      否 
    • 制造商：
      STMicroelectronics 
    • 晶體管極性：
      N-Channel 
    • 汲極/源極擊穿電壓：
      650 V 
    • 閘/源擊穿電壓：
      25 V 
    • 漏極連續(xù)電流：
      130 A 電阻汲極/源極 
    • RDS（導(dǎo)通）：
      0.014 Ohms 
    • 配置：
      Single 
    • 安裝風(fēng)格：
      Through Hole 
    • 封裝/箱體：
      Max247 
    • 封裝：
      Tube 
    
            
    
        
    
            
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    onsemi
    		

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    FAIRCHILD/仙童
    		

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    ON Semiconductor Corporation
    		

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    FAI
    		

    25+23+
    		

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    三年內(nèi)
    		

    		

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    更多FCD9N60NTM供應(yīng)商
            更新時(shí)間2025-5-8 14:14:00
        
    
        
    
          
    
            
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