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FCH35N60

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCH35N60

N-Channel SuperFET? MOSFET

Description SuperFET?MOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGW35N60H

DiscreteIGBT(High-SpeedVseries)600V/35A

Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit

FujiFuji Electric

富士電機富士電機株式會社

FGW35N60HD

DiscreteIGBT(High-SpeedVseries)600V/35A

600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit

FujiFuji Electric

富士電機富士電機株式會社

ICE35N60W

N-ChannelEnhancementModeMOSFET

ICEMOS

Icemos Technology

ICE35N60W

N-ChannelEnhancementModeMOSFET

MICROSS

Micross Components

ISPW35N60CFD

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤118m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXDH35N60B

IGBTwithoptionalDiode

HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard

IXYS

IXYS Corporation

IXDP35N60B

IGBTwithoptionalDiode

HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard

IXYS

IXYS Corporation

SIHB35N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    FCH35N60

  • 功能描述：

    MOSFET 600V N-Channel SuperFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi
24+
TO-247-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
FAIRCHILD/仙童
24+
TO3P-3
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗歡迎詢價
 詢價
onsemi(安森美)
24+
TO-247
8110
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
FAIRCHI
2020+
TO-247
30
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
FAIRCHI
2016+
TO-247
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
FAIRCHI
23+
TO-247
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
FAIRCHI
21+
TO247
12588
原裝正品,自己庫存 假一罰十
 詢價
三年內(nèi)
1983
只做原裝正品
 詢價
FSC
24+
TO-3P
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
ON
1809+
TO247-3
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多FCH35N60供應(yīng)商 更新時間2025-4-26 14:13:00

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