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FDA50N50

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDA50N50

500V N-Channel MOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?48A,500V,RDS(on)=0.105Ω@VGS=10V ?Lowgatecharge(typical105nC) ?LowCrss(typical45pF) ?Fastswitchin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDA50N50

50Ampere,500Volt N-Channel Planar Process Power MOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

FDA50N50

500V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDA50N50

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDA50N50_12

500V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDH50N50

500VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDH50N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDH50N50

50Ampere,500VoltN-ChannelPlanarProcessPowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IXFE50N50

HiPerFETTMPowerMOSFET

HiPerFETPowerMOSFET SingleDieMOSFET Features ?Lowcostdirect-copperbondedaluminiumpackage ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?2500Visolation ?Lowdraintocasecapacitance ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?

IXYS

IXYS Corporation

IXFK50N50

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFK50N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFN50N50

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFQ50N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=125mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR50N50

HiPerFET-TMPowerMOSFETsISOPLUS247-TM

HiPerFET?PowerMOSFETsISOPLUS247?(ElectricallyIsolatedBackSurface) SingleDieMOSFET Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFX50N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX50N50

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

MTE50N50

POWERFIELDEFFECTTRANSISTORN-CHANNELENHANCEMENTMODESILICONGATETMOS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細(xì)參數(shù)

  • 型號：

    FDA50N50

  • 功能描述：

    MOSFET 500V NCH MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
onsemi
24+
TO-3PN
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
仙童
2020+
原廠原裝正品
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
仙童
2021+
原廠原封裝
93628
原裝進(jìn)口現(xiàn)貨 假一罰百
 詢價(jià)
ON/安森美
24+
TO-247
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗(yàn)歡迎詢價(jià)
 詢價(jià)
FAIRCHILD/仙童
24+
N/P
16500
代理授權(quán)直銷,原裝現(xiàn)貨,假一罰十,長期穩(wěn)定供應(yīng)
 詢價(jià)
ONSEMI
2021
NA
450
全新原裝!優(yōu)勢庫存熱賣中!
 詢價(jià)
ONSemi
2133
TO-3P-3L
3600
全新原裝公司現(xiàn)貨
詢價(jià)
FAIRCHILD/仙童
19+/20+
TO-3P
5927
詢價(jià)
ONSemi
23+
TO-3P-3L
3520
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
仙童
21+
10560
十年專營,原裝現(xiàn)貨,假一賠十
 詢價(jià)
更多FDA50N50供應(yīng)商 更新時(shí)間2024-12-23 14:13:00

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