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FDB6670AS中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

FDB6670AS
廠商型號(hào)

FDB6670AS

功能描述

30V N-Channel PowerTrench SyncFET

文件大小

100.18 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-13 15:53:00

FDB6670AS規(guī)格書詳情

General Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6670AS/FDB6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode.

Features

? 31 A, 30 V. RDS(ON) = 8.5 m? @ VGS = 10 V RDS(ON) = 10.5 m? @ VGS = 4.5 V

? Includes SyncFET Schottky body diode

? Low gate charge (28nC typical)

? High performance trench technology for extremely low RDS(ON) and fast switching

? High power and current handling capability

產(chǎn)品屬性

  • 型號(hào):

    FDB6670AS

  • 功能描述:

    MOSFET 30V N-Channel PT SyncFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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