FDC6304P中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
FDC6304P規(guī)格書詳情
General Description
These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Features
■ -25 V, -0.46 A continuous, -1.0 A Peak. RDS(ON) = 1.5 Ω @ VGS= -2.7 V RDS(ON) = 1.1 Ω @ VGS = -4.5 V.
■ Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V.
■ Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.
產(chǎn)品屬性
- 型號：
FDC6304P
- 功能描述：
MOSFET SSOT-6 P-CH -25V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FSC |
22+ |
SOT163 |
12843 |
進口原裝 |
詢價 | ||
ON/安森美 |
23+ |
NA/ |
6250 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
FAIRCHILD/仙童 |
2019+ |
SOT23-6 |
36000 |
原盒原包裝 可BOM配套 |
詢價 | ||
Fairchild |
24+ |
SOT-23-6 |
18800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢! |
詢價 | ||
ON/安森美 |
22+ |
SOT163 |
81000 |
鄭重承諾只做原裝進口貨 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
SOT-23-6 |
24190 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
FAIRCHILD |
17+ |
SOT23-6 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
2017+ |
SOT23-6 |
6528 |
只做原裝正品假一賠十! |
詢價 | |||
ON/安森美 |
2105+ |
SOT-23 |
10053 |
詢價 | |||
FAIRCHILD/仙童 |
24+ |
SOT23-6 |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 |
