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FDD6N50TM

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDD6N50TM

500V N-Channel MOSFET

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6N50TM

N-Channel UniFETTM MOSFET500 V, 6 A, 900 m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6N50TM_10

500V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6N50TM_F085

Improved dv/dt capability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6N50TMF085

N-Channel UniFETTM MOSFET500 V, 6 A, 900 m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6N50TM-WS

N-Channel UniFETTM MOSFET500 V, 6 A, 900 m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDU6N50

N-ChannelUniFETTMMOSFET500V,6A,900m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDU6N50

500VN-ChannelMOSFET

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDU6N50F

N-ChannelMOSFET500V,5.5A,1.15廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFailchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDU6N50FTU

N-ChannelMOSFET500V,5.5A,1.15廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFailchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDU6N50TU

N-ChannelUniFETTMMOSFET500V,6A,900m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDU6N50TU

500VN-ChannelMOSFET

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB6N50

500VN-ChannelMOSFET

Features ?5.5A,500V,RDS(on)=1.3?@VGS=10V ?Lowgatecharge(typical17nC) ?LowCrss(typical11pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB6N50TM

600VN-ChannelMOSFET

Features ?5.5A,500V,RDS(on)=1.3?@VGS=10V ?Lowgatecharge(typical17nC) ?LowCrss(typical11pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD6N50C

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietaryplanarstripe,DMOStechnology

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD6N50C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQD6N50CTM

N-ChannelQFETMOSFET500V,4.5A,1.2

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQI6N50

500VN-ChannelMOSFET

Features ?5.5A,500V,RDS(on)=1.3?@VGS=10V ?Lowgatecharge(typical17nC) ?LowCrss(typical11pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP6N50

500Vn-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    FDD6N50TM

  • 功能描述：

    MOSFET 30V/16V 9.5/12MO NCH SINGLE

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
FAIRCHILD/仙童
24+
TO252
8950
BOM配單專家,發(fā)貨快,價(jià)格低
 詢價(jià)
onsemi
24+
TO-252AA
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
FAIRCHILD/仙童
21+
SOT-252
9850
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價(jià)
FAIRCHILD/仙童
23+
SOT-252
35680
只做進(jìn)口原裝QQ:373621633
 詢價(jià)
Fairchild(飛兆/仙童)
2023+
N/A
4550
全新原裝正品
 詢價(jià)
onsemi(安森美)
23+
TO-252
9555
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
ONSEMI/安森美
23+
DPAK-3TO-252-3
360000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價(jià)格低
 詢價(jià)
FAIRCHILD
2009+
40000
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
FAIRCHI
2020+
TO-252
5912
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
FairchildSemiconductor
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價(jià)
更多FDD6N50TM供應(yīng)商 更新時(shí)間2025-1-9 16:36:00

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