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FDFMA2P859T中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
FDFMA2P859T規(guī)格書詳情
General Description
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.
The MicroFET 2x2 Thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
MOSFET:
■ Max rDS(on) = 120 m at VGS = –4.5 V, ID = –3.0 A
■ Max rDS(on) = 160 m at VGS = –2.5 V, ID = –2.5 A
■ Max rDS(on) = 240 m at VGS = –1.8 V, ID = –1.0 A
Schottky:
■ VF < 0.54 V @ 1 A
■ Low profile - 0.55 mm maximum - in the new package MicroFET 2x2 Thin
■ Free from halogenated compounds and antimony oxides
■ RoHS compliant
產(chǎn)品屬性
- 型號：
FDFMA2P859T
- 功能描述：
MOSFET PT2 Pch 20V/8V & Schottky Diode
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 | ||
onsemi(安森美) |
23+ |
MicroFET(2x2) |
9908 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
FAIRCHILD07 |
22+ |
DFN |
6200 |
進(jìn)口原裝!現(xiàn)貨庫存 |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
QFN |
9000 |
原裝正品 |
詢價 | ||
ON/安森美 |
23+ |
QFN6 |
24981 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
FAIRCHILD |
22+23+ |
DFN-6 |
66851 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
FAIRCHILD |
DFN |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
FAIRCHI |
21+ |
DFN |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
FSC |
2020+ |
DFN-6 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 |
