FDG313N中文資料仙童半導體數(shù)據(jù)手冊PDF規(guī)格書
FDG313N規(guī)格書詳情
General Description
This N-Channel enhancement mode field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
Features
? 0.95 A, 25 V. RDS(on) = 0.45 ? @ VGS = 4.5 V
RDS(on) = 0.60 ? @ VGS = 2.7 V.
? Low gate charge (1.64 nC typical)
? Very low level gate drive requirements allowing direct
operation in 3V circuits (VGS(th) < 1.5V).
? Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
? Compact industry standard SC70-6 surface mount
package.
Applications
? Load switch
? Battery protection
? Power management
產(chǎn)品屬性
- 型號：
FDG313N
- 功能描述：
MOSFET SC70-6 N-CH 25V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
仙童 |
21+ |
42664 |
12588 |
原裝正品假一罰十 |
詢價 | ||
FAIRCHILD |
2023+ |
SOT-363 |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
ONSEMI/安森美 |
23+ |
SOT-363 |
3000 |
交期準時服務周到 |
詢價 | ||
FAIRCHILD/仙童 |
12+ |
SOT363 |
28640 |
進口原盤現(xiàn)貨/3K |
詢價 | ||
Fairchild/ON |
21+ |
6TSSOP SC88 SOT363 |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
Fairchild |
23+ |
33500 |
詢價 | ||||
onsemi(安森美) |
23+ |
SOT-363-6(SC-70-6) |
14843 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
ON/安森美 |
2019+ |
SOT-363 |
78550 |
原廠渠道 可含稅出貨 |
詢價 | ||
FAIRCHILD |
SOT363 |
3000 |
原裝長期供貨! |
詢價 | |||
FAIRCHILD/仙童 |
22+ |
SOT363 |
32500 |
鄭重承諾只做原裝進口貨 |
詢價 |
