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FJNS4212R

PNPEpitaxialSiliconTransistor

SwitchingApplication(BiasResistorBuiltIn) ?Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit ?BuiltinbiasResistor(R=47K?) ?ComplementtoFJNS3212R

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

GC4212

HIGHSPEEDPINDIODES

DESCRIPTION TheGC4200seriesarehighspeed(cathodebase)PINdiodesmadewithhighresistivityepitaxialsiliconmaterial.Thesediodesarepassivatedwithsilicondioxideforhighstabilityandreliabilityandhavebeenprovenbythousandsofdevicehoursinhighreliabilitysystems. APPLICA

MicrosemiMicrosemi Corporation

美高森美美高森美公司

GC4212

TMCONTROLDEVICES-HIGHSPEEDPINDIODES

DESCRIPTION TheGC4200seriesarehighspeed(cathodebase)PINdiodesmadewithhighresistivityepitaxialsiliconmaterial.Thesediodesarepassivatedwithsilicondioxideforhighstabilityandreliabilityandhavebeenprovenbythousandsofdevicehoursinhighreliabilitysystems. APPLICA

MicrosemiMicrosemi Corporation

美高森美美高森美公司

GMP4212

SurfaceMountPIN&LimiterDiodes

MicrosemiMicrosemi Corporation

美高森美美高森美公司

HO-NP-4212

CurrentTransducer

LEMlem

萊姆萊姆集團

HO-P-4212

CurrentTransducer

LEMlem

萊姆萊姆集團

IIRFB4212

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFB4212

KeyparametersoptimizedforClass-Daudioamplifierapplications

KERSEMI

Kersemi Electronic Co., Ltd.

IRFB4212

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFB4212PBF

KeyparametersoptimizedforClass-Daudioamplifierapplications

Description ThisDigitalAudioMOSFETisspecificallydesignedforClass-Daudioamplifierapplications.ThisMOSFETutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Furthermore,Gatecharge,body-diodereverserecoveryandinternalGateresistanceareopti

KERSEMI

Kersemi Electronic Co., Ltd.

供應(yīng)商型號品牌批號封裝庫存備注價格
ON/安森美
23+
AN
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
ON/安森美
23+
AN
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
更多FDLL4212供應(yīng)商 更新時間2025-3-13 15:00:00

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