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FDMS4435BZ

P-Channel PowerTrench? MOSFET -30 V, -18 A, 20 m廓

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeenespeciallytailoredtominimizetheon-stateresistance.ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435

30VP-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435

P-ChannelLogicLevelPowerTrench??OSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ?–9A,–30V.RDS(ON)=0.017Ω@VGS=

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435

P-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisP-ChannelMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationsrequiringawiderangeofgavedrivevoltageratings(4.5V–25V). Features ?–8.8A,–30VRDS(ON)=20mW@VGS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435

-30VP-ChannelMOSFET

GeneralDescription ThisdeviceiswellsuitedforPowerManagementandload switchingapplicationscommoninNotebookComputersand PortableBatteryPacks. Features VDS(V)=-30V ID=-8.8A(VGS=-10V) RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDS4435A

P-ChannelLogicLevelPowerTrench??OSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ?–9A,–30V.RDS(ON)=0.017Ω@VGS=

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435A

P-ChannelLogicLevelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435A-NL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

FDS4435BZ

30VoltP-ChannelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeenespeciallytailoredtominimizetheon-stateresistance. ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435BZ

P-ChannelPowerTrench?MOSFET-30V,-8.8A,20m廓

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeenespeciallytailoredtominimizetheon-stateresistance. ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435BZ

-30VP-ChannelMOSFET

GeneralDescription ThisdeviceiswellsuitedforPowerManagementandload switchingapplicationscommoninNotebookComputersand PortableBatteryPacks. Features VDS(V)=-30V ID=-8.8A(VGS=-10V) RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDS4435BZ-NL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

FDS4435-NL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

FQ4435Q

Plastic-EncapsulateMOSFETS

DESCRIPTION TheFQ4435Qusesadvancedtrenchtechnologytoprovideexcellent RDS(on),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgate resistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebook CPUcorepowerconversion. APPLICATIONS BatteryS

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FQ4435Q

Plastic-EncapsulateMOSFETS

DESCRIPTION TheFQ4435Qusesadvancedtrenchtechnologytoprovideexcellent RDS(on),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgate resistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebook CPUcorepowerconversion. APPLICATIONS BatteryS

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FQ4435SQ

Plastic-EncapsulateMOSFETS

DESCRIPTION TheFQ4435SQusesadvancedtrenchtechnologytoprovideexcellentR shoot-throughimmunity,bodydiodecharacteristicsandltra-lowgateresistance. ThisdeviceisideallysuitedforuseasalowsideswitchinNotebookCPUcorepowerconversion. APPLICATIONS BatterySwitch L

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FS4435

SingleP-ChannelEnhancementModePowerMOSFET

FortuneFortune Semiconductor Corp.

富晶富晶電子股份有限公司

FTK4435

HighPowerandcurrenthandingcapability

FS

First Silicon Co., Ltd

G4435SS

P-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

GAPM4435

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

詳細(xì)參數(shù)

  • 型號(hào)：

    FDMS4435BZ

  • 功能描述：

    MOSFET P-Channel PowerTrench MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
onsemi
24+
8-PQFN(5x6)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
ONSEMI/安森美
23+
PQFN-8
360000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量?jī)r(jià)格低
 詢價(jià)
FAIRCHILD
24+
原廠原封
6523
進(jìn)口原裝公司百分百現(xiàn)貨可出樣品
 詢價(jià)
ONSemiconductor
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
 詢價(jià)
FAIRCHILD
23+
SMD
98
原裝正品--可開增值稅發(fā)票量大可訂貨
 詢價(jià)
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
F
2020+
POWER 5
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
Fairchild
1930+
N/A
3889
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 詢價(jià)
ON(安森美)
2112+
PQFN-8
105000
3000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
 詢價(jià)
ON
21+
QFN-8
14756
原裝現(xiàn)貨假一賠十
 詢價(jià)
更多FDMS4435BZ供應(yīng)商 更新時(shí)間2024-12-22 14:13:00

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