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FDS4435

30VP-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435

P-ChannelLogicLevelPowerTrench??OSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ?–9A,–30V.RDS(ON)=0.017Ω@VGS=

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435

P-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisP-ChannelMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationsrequiringawiderangeofgavedrivevoltageratings(4.5V–25V). Features ?–8.8A,–30VRDS(ON)=20mW@VGS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435

-30VP-ChannelMOSFET

GeneralDescription ThisdeviceiswellsuitedforPowerManagementandload switchingapplicationscommoninNotebookComputersand PortableBatteryPacks. Features VDS(V)=-30V ID=-8.8A(VGS=-10V) RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDS4435A

P-ChannelLogicLevelPowerTrench??OSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ?–9A,–30V.RDS(ON)=0.017Ω@VGS=

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435A

P-ChannelLogicLevelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435A-NL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

FDS4435BZ

30VoltP-ChannelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeenespeciallytailoredtominimizetheon-stateresistance. ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435BZ

P-ChannelPowerTrench?MOSFET-30V,-8.8A,20m廓

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeenespeciallytailoredtominimizetheon-stateresistance. ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS4435BZ

-30VP-ChannelMOSFET

GeneralDescription ThisdeviceiswellsuitedforPowerManagementandload switchingapplicationscommoninNotebookComputersand PortableBatteryPacks. Features VDS(V)=-30V ID=-8.8A(VGS=-10V) RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDS4435BZ-NL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

FDS4435-NL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

FQ4435Q

Plastic-EncapsulateMOSFETS

DESCRIPTION TheFQ4435Qusesadvancedtrenchtechnologytoprovideexcellent RDS(on),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgate resistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebook CPUcorepowerconversion. APPLICATIONS BatteryS

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FQ4435Q

Plastic-EncapsulateMOSFETS

DESCRIPTION TheFQ4435Qusesadvancedtrenchtechnologytoprovideexcellent RDS(on),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgate resistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebook CPUcorepowerconversion. APPLICATIONS BatteryS

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FQ4435SQ

Plastic-EncapsulateMOSFETS

DESCRIPTION TheFQ4435SQusesadvancedtrenchtechnologytoprovideexcellentR shoot-throughimmunity,bodydiodecharacteristicsandltra-lowgateresistance. ThisdeviceisideallysuitedforuseasalowsideswitchinNotebookCPUcorepowerconversion. APPLICATIONS BatterySwitch L

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FS4435

SingleP-ChannelEnhancementModePowerMOSFET

FortuneFortune Semiconductor Corp.

富晶富晶電子股份有限公司

FTK4435

HighPowerandcurrenthandingcapability

FS

First Silicon Co., Ltd

G4435SS

P-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

GAPM4435

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

GF4435

P-ChannelEnhancement-ModeMOSFET

Features ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignforUltraLowOn-Resistance ?SpeciallyDesignedforLowVoltageDC/DCConverters ?FastSwitchingforHighEfficiency

GE

GE Industrial Company

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
23+
QFN
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FAIRCHILD/仙童
2022
QFN
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
FAIRCHILD/仙童
23+
QFN
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
FAIRCILD
22+
QFN
8000
原裝正品支持實單
 詢價
FAIRCHILD/仙童
23+
NA/
3631
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
PlatoProducts
新
57
全新原裝 貨期兩周
 詢價
Plato Products
2022+
53
全新原裝 貨期兩周
 詢價
三年內(nèi)
1983
只做原裝正品
 詢價
ON
2023+
SOT23
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
ON
1809+
SOT-23-3
6675
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多FDMX4435BZ供應(yīng)商 更新時間2025-1-10 9:48:00

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